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参数资料
| 型号： | C67070-A2111-A70 |
| 厂商： | SIEMENS AG |
| 英文描述： | PTSE 25C 25#16 SKT RECP |
| 中文描述： | IGBT功率模块（半桥包括快速续流二极管二极管领域加倍） |
| 文件页数： | 2/9页 |
| 文件大小： | 110K |
| 代理商： | C67070-A2111-A70 |
Semiconductor Group
2
Mar-28-1996
BSM 35 GB 120 DN2
Electrical Characteristics
, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
typ.
Unit
min.
max.
Static Characteristics
Gate threshold voltage
V
GE
= V
CE,
I
C
= 1.2 mA
Collector-emitter saturation voltage
V
GE
= 15 V, I
C
= 35 A, T
j
= 25 °C
V
GE
= 15 V, I
C
= 35 A, T
j
= 125 °C
Zero gate voltage collector current
V
CE
= 1200 V, V
GE
= 0 V, T
j
= 25 °C
V
CE
= 1200 V, V
GE
= 0 V, T
j
= 125 °C
Gate-emitter leakage current
V
GE
= 20 V, V
CE
= 0 V
V
GE(th)
4.5
5.5
6.5
V
V
CE(sat)
-
-
3.3
2.7
3.9
3.2
I
CES
-
-
2.4
0.6
-
1
mA
I
GES
-
-
150
nA
AC Characteristics
Transconductance
V
CE
= 20 V, I
C
= 35 A
Input capacitance
g
fs
11
-
-
S
V
CE
= 25 V, V
GE
= 0 V, f= 1 MHz
Output capacitance
V
CE
= 25 V, V
GE
= 0 V, f= 1 MHz
Reverse transfer capacitance
V
CE
= 25 V, V
GE
= 0 V, f= 1 MHz
C
iss
-
2
-
nF
C
oss
-
0.3
-
C
rss
-
0.14
-
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| C67070-A2120-A67 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
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