参数资料
型号: CAT24C128WI-GT3
厂商: ON Semiconductor
文件页数: 4/16页
文件大小: 0K
描述: IC EEPROM 128KBIT 400KHZ 8SOIC
标准包装: 1
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 128K (16K x 8)
速度: 400kHz
接口: I²C,2 线串口
电源电压: 1.8 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 标准包装
产品目录页面: 807 (CN2011-ZH PDF)
其它名称: CAT24C128WI-GT3DKR
CAT24C128
Table 7. A.C. CHARACTERISTICS
(V CC = 1.8 V to 5.5 V, T A = ? 40 ° C to +85 ° C and V CC = 2.5 V to 5.5 V, T A = ? 4 0 ° C to +125 ° C) (Note 10)
Standard
V CC = 1.8 V ? 5.5 V
Fast
V CC = 1.8 V ? 5.5 V
Fast ? Plus (Note 13)
V CC = 2.5 V ? 5.5 V
T A = ? 40 5 C to +85 5 C
Symbol
Parameter
Min
Max
Min
Max
Min
Max
Units
F SCL
t HD:STA
t LOW
t HIGH
t SU:STA
t HD:DAT
t SU:DAT
t R (Note 11)
t F (Note 11)
t SU:STO
t BUF
t AA
t DH
T i (Note 11)
t SU:WP
t HD:WP
t WR
Clock Frequency
START Condition Hold Time
Low Period of SCL Clock
High Period of SCL Clock
START Condition Setup Time
Data In Hold Time
Data In Setup Time
SDA and SCL Rise Time
SDA and SCL Fall Time
STOP Condition Setup Time
Bus Free Time Between
STOP and START
SCL Low to Data Out Valid
Data Out Hold Time
Noise Pulse Filtered at SCL
and SDA Inputs
WP Setup Time
WP Hold Time
Write Cycle Time
4
4.7
4
4.7
0
250
4
4.7
100
0
2.5
100
1,000
300
3.5
100
5
0.6
1.3
0.6
0.6
0
100
0.6
1.3
100
0
2.5
400
300
300
0.9
100
5
0.25
0.45
0.40
0.25
0
50
0.25
0.5
50
0
1
1,000
100
100
0.40
50
5
kHz
m s
m s
m s
m s
m s
ns
ns
ns
m s
m s
m s
ns
ns
m s
m s
ms
t PU
(Notes 11, 12)
Power-up to Ready Mode
1
1
0.1
1
ms
10. Test conditions according to “A.C. Test Conditions” table.
11. Tested initially and after a design or process change that affects this parameter.
12. t PU is the delay between the time V CC is stable and the device is ready to accept commands.
13. Fast ? Plus (1 MHz) speed class available for new product revision “C”. The die revision “C” is identified by letter “C” or a dedicated marking
code on top of the package.
Table 8. A.C. TEST CONDITIONS
Input Levels
Input Rise and Fall Times
Input Reference Levels
Output Reference Levels
Output Load
0.2 x V CC to 0.8 x V CC
v 50 ns
0.3 x V CC , 0.7 x V CC
0.5 x V CC
Current Source: I OL = 3 mA (V CC ≥ 2.5 V); I OL = 1 mA (V CC < 2.5 V); C L = 100 pF
http://onsemi.com
4
相关PDF资料
PDF描述
994-009-030R121 BACKSHELL DB9 STRAIGHT DIE CAST
982-015-010R031 CONN BACKSHELL DB15 PLST GRY
CAT25320VI-GT3 IC EEPROM 32KBIT 10MHZ 8SOIC
970-025-020R121 BACKSHELL DB25 METALIZED PLASTIC
970-009-030R121 BACKSHELL DB9 DIE CAST NICKEL
相关代理商/技术参数
参数描述
CAT24C128WI-GT3 制造商:ON Semiconductor 功能描述:IC EEPROM 128KBIT SERIAL 400KHZ SOIC-8
CAT24C128WIGT3JN 功能描述:IC EEPROM 128KBIT I2C 8SOIC 制造商:on semiconductor 系列:- 零件状态:在售 存储器类型:非易失 存储器格式:EEPROM 技术:EEPROM 存储容量:128Kb (16K x 8) 时钟频率:1MHz 写周期时间 - 字,页:5ms 访问时间:400ns 存储器接口:I2C 电压 - 电源:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C(TA) 标准包装:3,000
CAT24C128YGI 制造商:Catalyst Semiconductor 功能描述:
CAT24C128YI-G 功能描述:电可擦除可编程只读存储器 128K-Bit I2C Serial CMOS 电可擦除可编程只读存储器 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
CAT24C128YI-GT3 功能描述:电可擦除可编程只读存储器 128K-Bit I2C Serial CMOS 电可擦除可编程只读存储器 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8