参数资料
| 型号： | CAT24C128WI-GT3 |
| 厂商： | ON Semiconductor |
| 文件页数： | 8/16页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 128KBIT 400KHZ 8SOIC |
| 标准包装： | 1 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 128K (16K x 8) |
| 速度： | 400kHz |
| 接口： | I²C，2 线串口 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 标准包装 |
| 产品目录页面： | 807 (CN2011-ZH PDF) |
| 其它名称： | CAT24C128WI-GT3DKR |
CAT24C128
BUS ACTIVITY: S
T
A
MASTER R
T
SLAVE
ADDRESS
ADDRESS
BYTE
a 13 ? a 8
ADDRESS
BYTE
a 7 ? a 0
DATA
BYTE
n
DATA
BYTE
n+1
DATA
BYTE
n+P
S
T
O
P
S
* *
P
SLAVE
A
C
K
A
C
K
A
C
K
A
C
K
A
C
K
A
C
K
A
C
K
* = Don’t Care Bit
P v 63
Figure 8. Page Write Sequence
ADDRESS
BYTE
DATA
BYTE
1
8
9
1
8
SCL
SDA
a 7
a 0
d 7
d 0
t SU:WP
WP
t HD:WP
Figure 9. WP Timing
Read Operations
Immediate Read
Upon receiving a Slave address with the R/W bit set to ‘1’,
the CAT24C128 will interpret this as a request for data
residing at the current byte address in memory. The
CAT24C128 will acknowledge the Slave address, will
immediately shift out the data residing at the current address,
and will then wait for the Master to respond. If the Master
does not acknowledge the data (NoACK) and then follows
up with a STOP condition (Figure 10), the CAT24C128
returns to Standby mode.
Selective Read
To read data residing at a specific location, the internal
address counter must first be initialized as described under
Byte Write. If rather than following up the two address bytes
with data, the Master instead follows up with an Immediate
Read sequence, then the CAT24C128 will use the 14 active
address bits to initialize the internal address counter and will
shift out data residing at the corresponding location. If the
Master does not acknowledge the data (NoACK) and then
follows up with a STOP condition (Figure 11), the
CAT24C128 returns to Standby mode.
Sequential Read
If during a Read session the Master acknowledges the 1 st
data byte, then the CAT24C128 will continue transmitting
data residing at subsequent locations until the Master
responds with a NoACK, followed by a STOP (Figure 12).
In contrast to Page Write, during Sequential Read the
address count will automatically increment to and then
wrap ? around at end of memory (rather than end of page).
http://onsemi.com
8
相关PDF资料 |
PDF描述 |
|---|---|
| 994-009-030R121 | BACKSHELL DB9 STRAIGHT DIE CAST |
| 982-015-010R031 | CONN BACKSHELL DB15 PLST GRY |
| CAT25320VI-GT3 | IC EEPROM 32KBIT 10MHZ 8SOIC |
| 970-025-020R121 | BACKSHELL DB25 METALIZED PLASTIC |
| 970-009-030R121 | BACKSHELL DB9 DIE CAST NICKEL |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CAT24C128WI-GT3 | 制造商:ON Semiconductor 功能描述:IC EEPROM 128KBIT SERIAL 400KHZ SOIC-8 |
| CAT24C128WIGT3JN | 功能描述:IC EEPROM 128KBIT I2C 8SOIC 制造商:on semiconductor 系列:- 零件状态:在售 存储器类型:非易失 存储器格式:EEPROM 技术:EEPROM 存储容量:128Kb （16K x 8） 时钟频率:1MHz 写周期时间 - 字，页:5ms 访问时间:400ns 存储器接口:I2C 电压 - 电源:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C（TA） 标准包装:3,000 |
| CAT24C128YGI | 制造商:Catalyst Semiconductor 功能描述: |
| CAT24C128YI-G | 功能描述:电可擦除可编程只读存储器 128K-Bit I2C Serial CMOS 电可擦除可编程只读存储器 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| CAT24C128YI-GT3 | 功能描述:电可擦除可编程只读存储器 128K-Bit I2C Serial CMOS 电可擦除可编程只读存储器 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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