参数资料
| 型号： | CAT25010VI-GT3 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/18页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 1KBIT 10MHZ 8SOIC |
| 标准包装： | 1 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 1K (128 x 8) |
| 速度： | 20MHz |
| 接口： | SPI 3 线串行 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 标准包装 |
| 产品目录页面： | 807 (CN2011-ZH PDF) |
| 其它名称： | CAT25010VI-GT3DKR |
CAT25010, CAT25020, CAT25040
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Operating Temperature
Storage Temperature
Voltage on any Pin with Respect to Ground (Note 1)
Ratings
? 45 to +130
? 65 to +150
? 0.5 to V CC + 0.5
Units
° C
° C
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
Table 2. RELIABILITY CHARACTERISTICS (Note 2)
Symbol
N END (Note 3)
T DR
Endurance
Data Retention
Parameter
Min
1,000,000
100
Units
Program / Erase Cycles
Years
Table 3. D.C. OPERATING CHARACTERISTICS
( V CC = 1.8 V to 5.5 V, T A = ? 40 ° C to +85 ° C and V CC = 2.5 V to 5.5 V, T A = ? 40 ° C to +125 ° C, unless otherwise specified.)
Symbol
Parameter
Test Conditions
Min
Max
Units
I CC
I SB1
I SB2
I L
Supply Current
Standby Current
Standby Current
Input Leakage Current
Read, Write, V CC = 5.0 V,
SO open
V IN = GND or V CC , CS = V CC ,
WP = V CC , V CC = 5.0 V
V IN = GND or V CC , CS = V CC ,
WP = GND, V CC = 5.0 V
V IN = GND or V CC
10 MHz / ? 40 ° C to 85 ° C
5 MHz / ? 40 ° C to 125 ° C
T A = ? 40 ° C to +85 ° C
T A = ? 40 ° C to +125 ° C
? 2
2
2
2
4
5
2
mA
mA
m A
m A
m A
m A
I LO
Output Leakage
Current
CS = V CC ,
V OUT = GND or V CC
T A = ? 40 ° C to +85 ° C
T A = ? 40 ° C to +125 ° C
? 1
? 1
1
2
m A
m A
V IL
V IH
V OL1
Input Low Voltage
Input High Voltage
Output Low Voltage
V CC > 2.5 V, I OL = 3.0 mA
? 0.5
0.7 V CC
0.3 V CC
V CC + 0.5
0.4
V
V
V
V OH1
V OL2
V OH2
Output High Voltage
Output Low Voltage
Output High Voltage
V CC > 2.5 V, I OH = ? 1.6 mA
V CC > 1.8 V, I OL = 150 m A
V CC > 1.8 V, I OH = ? 100 m A
V CC ? 0.8 V
V CC ? 0.2 V
0.2
V
V
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Table 4. P IN CAPACITANCE (Note 2) (T A = 25 ° C, f = 1.0 MHz, V CC = +5.0 V)
Symbol
C OUT
C IN
Test
Output Capacitance (SO)
Input Capacitance (CS, SCK, SI, WP, HOLD)
Conditions
V OUT = 0 V
V IN = 0 V
Min
Typ
Max
8
8
Units
pF
pF
1. The DC input voltage on any pin should not be lower than ? 0.5 V or higher than V CC + 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than ? 1.5 V or overshoot to no more than V CC + 1.5 V, for periods of less than 20 ns.
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC ? Q100
and JEDEC test methods.
3. Page Mode, V CC = 5 V, 25 ° C.
http://onsemi.com
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CAT25010VI-G-T3 | 制造商:ON Semiconductor 功能描述:EEPROM Serial-SPI 1K-Bit 128 x 8 2.5V/3.3V/5V 8-Pin SOIC N T/R |
| CAT25010VP2I-GT3 | 功能描述:电可擦除可编程只读存储器 1K-Bit SPI Serial RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| CAT25010Y | 功能描述:电可擦除可编程只读存储器 (128x8) 1k 2.5-6.0 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| CAT25010Y-1.8 | 功能描述:电可擦除可编程只读存储器 (128x8) 1k 1.8-6.0 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| CAT25010YA | 功能描述:电可擦除可编程只读存储器 (128x8) 1k 2.5-6.0 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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