参数资料
型号: CAT25010VI-GT3
厂商: ON Semiconductor
文件页数: 9/18页
文件大小: 0K
描述: IC EEPROM 1KBIT 10MHZ 8SOIC
标准包装: 1
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 1K (128 x 8)
速度: 20MHz
接口: SPI 3 线串行
电源电压: 1.8 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 标准包装
产品目录页面: 807 (CN2011-ZH PDF)
其它名称: CAT25010VI-GT3DKR
CAT25010, CAT25020, CAT25040
READ OPERATIONS
Read from Memory Array
To read from memory, the host sends a READ instruction
followed by a 8 ? bit address (for the CAT25040, bit 3 of the
read instruction opcode contains A8 address bit).
After receiving the last address bit, the CAT25010/20/40
will respond by shifting out data on the SO pin (as shown in
Figure 9). Sequentially stored data can be read out by simply
continuing to run the clock. The internal address pointer is
automatically incremented to the next higher address as data
is shifted out. After reaching the highest memory address,
the address counter “rolls over” to the lowest memory
address, and the read cycle can be continued indefinitely.
The read operation is terminated by taking CS high.
Read Status Register
To read the status register, the host simply sends a RDSR
command. After receiving the last bit of the command, the
CAT25010/20/40 will shift out the contents of the status
register on the SO pin (Figure 10). The status register may
be read at any time, including during an internal write cycle.
While the internal write cycle is in progress, the RDSR
command will output the full content of the status register
(New product, Rev. E) or the RDY (Ready) bit only (i.e.,
data out = FFh) for previous product revisions C, D (Mature
product). For easy detection of the internal write cycle
completion, both during writing to the memory array and to
the status register, we recommend sampling the RDY bit
only through the polling routine. After detecting the RDY bit
“0”, the next RDSR instruction will always output the
expected content of the status register.
CS
0
1
2
3
4
5
6
7
8
9
12 13
14 15
16
17
18 19
20
21 22
SCK
OPCODE
BYTE ADDRESS
SI
0
0
0
0
X*
0
1
1
A 7
A 0
SO
HIGH IMPEDANCE
Dashed Line = mode (1, 1)
* X = 0 for CAT25010, CAT25020. X = A8 for CAT25040
DATA OUT
D7 D6 D5 D4 D3 D2 D1 D0
MSB
Figure 9. READ Timing
CS
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
SCK
OPCODE
SI
0
0
0
0
0
1
0
1
SO
HIGH IMPEDANCE
7
6
5
4
DATA OUT
3
2
1
0
Dashed Line = mode (1, 1)
MSB
Figure 10. RDSR Timing
http://onsemi.com
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相关代理商/技术参数
参数描述
CAT25010VI-G-T3 制造商:ON Semiconductor 功能描述:EEPROM Serial-SPI 1K-Bit 128 x 8 2.5V/3.3V/5V 8-Pin SOIC N T/R
CAT25010VP2I-GT3 功能描述:电可擦除可编程只读存储器 1K-Bit SPI Serial RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
CAT25010Y 功能描述:电可擦除可编程只读存储器 (128x8) 1k 2.5-6.0 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
CAT25010Y-1.8 功能描述:电可擦除可编程只读存储器 (128x8) 1k 1.8-6.0 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
CAT25010YA 功能描述:电可擦除可编程只读存储器 (128x8) 1k 2.5-6.0 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8