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| 型号： | CAT25128XI |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/20页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 128KB SPI SER 8SOIC |
| 标准包装： | 94 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 128K (16K x 8) |
| 速度： | 10MHz |
| 接口： | SPI 3 线串行 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.209"，5.30mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
CAT25128
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Operating Temperature
Storage Temperature
Voltage on any Pin with Respect to Ground (Note 1)
Ratings
? 45 to +130
? 65 to +150
? 0.5 to +6.5
Units
° C
° C
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The DC input voltage on any pin should not be lower than ? 0.5 V or higher than V CC + 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than ? 1.5 V or overshoot to no more than V CC + 1.5 V, for periods of less than 20 ns.
Table 2. RELIABILITY CHARACTERISTICS (Note 2)
Symbol
N END (Notes 3, 4)
T DR
Endurance
Data Retention
Parameter
Min
1,000,000
100
Units
Program / Erase Cycles
Years
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC ? Q100
and JEDEC test methods.
3. Page Mode, V CC = 5 V, 25 ° C.
4. The new product revision (E) uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when
a single byte has to be written, 4 bytes (including the ECC bits) are re ? programmed. It is recommended to write by multiple of 4 bytes in order
to benefit from the maximum number of write cycles.
Table 3. D.C. OPERATING CHARACTERISTICS ? MATURE PRODUCT
( V CC = 1.8 V to 5.5 V, T A = ? 40 ° C to +85 ° C and V CC = 2.5 V to 5.5 V, T A = ? 40 ° C to +125 ° C, unless otherwise specified.)
Symbol
Parameter
Test Conditions
Min
Max
Units
I CCR
I CCW
I SB1
I SB2
I L
Supply Current
(Read Mode)
Supply Current
(Write Mode)
Standby Current
Standby Current
Input Leakage Current
Read, V CC = 5.5 V,
SO open
Write, V CC = 5.5 V,
SO open
V IN = GND or V C C , CS = V CC ,
WP = V CC , HOLD = V CC ,
V CC = 5.5 V
V IN = GND or V CC , CS = V CC ,
WP = GND, HOLD = GND,
V CC = 5.5 V
V IN = GND or V CC
10 MHz / ? 40 ° C to 85 ° C
5 MHz / ? 40 ° C to 125 ° C
10 MHz / ? 40 ° C to 85 ° C
5 MHz / ? 40 ° C to 125 ° C
T A = ? 40 ° C to +85 ° C
T A = ? 40 ° C to +125 ° C
T A = ? 40 ° C to +85 ° C
T A = ? 40 ° C to +125 ° C
? 2
2
2
4
4
1
3
4
5
2
mA
mA
mA
mA
m A
m A
m A
m A
m A
I LO
Output Leakage
Current
CS = V CC ,
V OUT = GND or V CC
T A = ? 40 ° C to +85 ° C
T A = ? 40 ° C to +125 ° C
? 1
? 1
1
2
m A
m A
V IL
V IH
V OL1
Input Low Voltage
Input High Voltage
Output Low Voltage
V CC > 2.5 V, I OL = 3.0 mA
? 0.5
0.7 V CC
0.3 V CC
V CC + 0.5
0.4
V
V
V
V OH1
V OL2
V OH2
Output High Voltage
Output Low Voltage
Output High Voltage
V CC > 2.5 V, I OH = ? 1.6 mA
V CC > 1.8 V, I OL = 150 m A
V CC > 1.8 V, I OH = ? 100 m A
V CC ? 0.8 V
V CC ? 0.2 V
0.2
V
V
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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