参数资料
型号: CAT25256LI-G
厂商: ON Semiconductor
文件页数: 3/20页
文件大小: 0K
描述: IC EEPROM 256KBIT 10MHZ 8DIP
标准包装: 50
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 256K (32K x 8)
速度: 10MHz
接口: SPI 3 线串行
电源电压: 1.8 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-DIP(0.300",7.62mm)
供应商设备封装: 8-PDIP
包装: 管件
产品目录页面: 808 (CN2011-ZH PDF)
CAT25256
Table 4. D.C. OPERATING CHARACTERISTICS ? NEW PRODUCT (Rev E)
( V CC = 1.8 V to 5.5 V, T A = ? 40 ° C to +85 ° C and V CC = 2.5 V to 5.5 V, T A = ? 40 ° C to +125 ° C, unless otherwise specified.)
Symbol
Parameter
Test Conditions
Min
Max
Units
I CCR
Supply Current
(Read Mode)
Read, SO open /
? 40 ° C to +85 ° C
V CC = 1.8 V, f SCK = 5 MHz
V CC = 2.5 V, f SCK =10 MHz
0.8
1.2
mA
V CC = 5.5 V, f SCK = 20 MHz
3.0
Read, SO open /
? 40 ° C to +125 ° C
2.5 V< V CC < 5.5 V,
f SCK = 10 MHz
2.0
I CCW
Supply Current
(Write Mode)
Write, CS = V CC /
? 40 ° C to +85 ° C
V CC = 1.8 V
V CC = 2.5 V
1.5
2
mA
V CC = 5.5 V
2
Write, CS = V CC /
? 40 ° C to +125 ° C
2.5 V< V CC < 5.5 V
2
I SB1
I SB2
I L
Standby Current
Standby Current
Input Leakage Current
V IN = GND or V CC ,
CS = V CC , WP = V CC ,
V CC = 5.5 V
V IN = GND or V CC ,
CS = V CC , WP = GND,
V CC = 5.5 V
V IN = GND or V CC
T A = ? 40 ° C to +85 ° C
T A = ? 40 ° C to +125 ° C
T A = ? 40 ° C to +85 ° C
T A = ? 40 ° C to +125 ° C
? 2
1
3
3
5
2
m A
m A
m A
I LO
V IL1
V IH1
V IL2
V IH2
Output Leakage
Current
Input Low Voltage
Input High Voltage
Input Low Voltage
Input High Voltage
CS = V CC
V OUT = GND or V CC
V CC ≥ 2.5 V
V CC ≥ 2.5 V
V CC < 2.5 V
V CC < 2.5 V
T A = ? 40 ° C to +85 ° C
T A = ? 40 ° C to +125 ° C
? 1
? 1
? 0.5
0.7 V CC
? 0.5
0.75 V CC
1
2
0.3 V CC
V CC + 0.5
0.25 V CC
V CC + 0.5
m A
V
V
V
V
V OL1
V OH1
V OL2
V OH2
Output Low Voltage
Output High Voltage
Output Low Voltage
Output High Voltage
V CC ≥ 2.5 V, I OL = 3.0 mA
V CC ≥ 2.5 V, I OH = ? 1.6 mA
V CC < 2.5 V, I OL = 150 m A
V CC < 2.5 V, I OH = ? 100 m A
V CC ? 0.8 V
V CC ? 0.2 V
0.4
0.2
V
V
V
V
Table 5. P IN  CAPACITANCE (Note 5) (T A = 25 ° C, f = 1.0 MHz, V CC = +5.0 V)
Symbol
C OUT
C IN
Test
Output Capacitance (SO)
Input Capacitance (CS, SCK, SI, WP, HOLD)
Conditions
V OUT = 0 V
V IN = 0 V
Min
Typ
Max
8
8
Units
pF
pF
5. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC ? Q100
and JEDEC test methods.
http://onsemi.com
3
相关PDF资料
PDF描述
954-009-030R121 BACKSHELL 9POS 45DEG DIE CAST
HSC50DRYS CONN EDGECARD 100PS DIP .100 SLD
HSC43DRAI CONN EDGECARD 86POS R/A .100 SLD
1478763-9 CONN BACKSHELL 9P METAL 45DEG
ACB85DHRN CONN CARD EXTEND 170POS .050"
相关代理商/技术参数
参数描述
CAT25256LI-G 制造商:ON Semiconductor 功能描述:IC EEPROM 256KBIT SERIAL 10MHZ DIP-8 制造商:ON Semiconductor 功能描述:IC, EEPROM, 256KBIT, SERIAL, 10MHZ DIP-8
CAT25256VI-G 功能描述:电可擦除可编程只读存储器 (32kx8) 256K SPI 1.8 to 5.5V RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
CAT25256VI-G 制造商:ON Semiconductor 功能描述:IC EEPROM 256KBIT SERIAL 10MHZ SOIC-8
CAT25256VI-GT3 功能描述:电可擦除可编程只读存储器 256K SPI Serial CMOS 电可擦除可编程只读存储器 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
CAT25256XE 制造商:ON Semiconductor 功能描述: