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参数资料
| 型号： | CAT28C256H13I12 |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/14页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 256KB PARALLEL 28TSOP |
| 产品变化通告： | Catalyst Group Product Obsolescence 26/Apr/2010 |
| 标准包装： | 234 |
| 格式 - 存储器： | EEPROMs - 并行 |
| 存储器类型： | EEPROM |
| 存储容量： | 256K (32K x 8) |
| 速度： | 120ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 28-TSSOP（0.465"，11.8mm 宽） |
| 供应商设备封装： | 28-TSOP（8x13.4） |
| 包装： | 托盘 |
CAT28C256
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Temperature Under Bias
Storage Temperature
Voltage on Any Pin with Respect to Ground (Note 1)
V CC with Respect to Ground
Package Power Dissipation Capability (T A = 25 ° C)
Lead Soldering Temperature (10 secs)
Output Short Circuit Current (Note 2)
Ratings
–55 to +125
–65 to +150
–2.0 V to +V CC + 2.0 V
? 2.0 to +7.0
1.0
300
100
Units
° C
° C
V
V
W
° C
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The minimum DC input voltage is ? 0.5 V. During transitions, inputs may undershoot to ? 2.0 V for periods of less than 20 ns. Maximum DC
voltage on output pins is V CC + 0.5 V, which may overshoot to V CC + 2.0 V for periods of less than 20 ns.
2. Output shorted for no more than one second. No more than one output shorted at a time.
Table 2. RELIABILITY CHARACTERISTICS (Note 3)
Symbol
N END
T DR
V ZAP
I LTH (Note 4)
Parameter
Endurance
Data Retention
ESD Susceptibility
Latch ? Up
Test Method
MIL ? STD ? 883, Test Method 1033
MIL ? STD ? 883, Test Method 1008
MIL ? STD ? 883, Test Method 3015
JEDEC Standard 17
Min
100,000
100
2,000
100
Max
Units
Cycles/Byte
Years
V
mA
3. These parameters are tested initially and after a design or process change that affects the parameters.
4. Latch ? up protection is provided for stresses up to 100 mA on address and data pins from ? 1 V to V CC + 1 V.
Table 3. D.C. OPERATING CHARACTERISTICS (V CC = 5 V ± 10%, unless otherwise specified.)
Limits
Symbol
I CC
I CCC (Note 5)
I SB
I SBC (Note 6)
I LI
I LO
V IH (Note 6)
V IL (Note 5)
Parameter
V CC Current (Operating, TTL)
V CC Current (Operating, CMOS)
V CC Current (Standby, TTL)
V CC Current (Standby, CMOS)
Input Leakage Current
Output Leakage Current
High Level Input Voltage
Low Level Input Voltage
Test Conditions
CE = OE = V IL ,
f = 8 MHz, All I/O’s Open
CE = OE = V ILC ,
f = 8 MHz, All I/O’s Open
CE = V IH , All I/O’s Open
CE = V IHC , All I/O’s Open
V IN = GND to V CC
V OUT = GND to V CC ,
CE = V IH
Min
? 10
? 10
2
? 0.3
Typ
Max
30
25
1
150
10
10
V CC + 0.3
0.8
Units
mA
mA
mA
m A
m A
m A
V
V
V OH
V OL
V WI
High Level Output Voltage
Low Level Output Voltage
Write Inhibit Voltage
I OH = ? 400 m A
I OL = 2.1 mA
2.4
3.5
0.4
V
V
V
5. V ILC = ? 0.3 V to +0.3 V.
6. V IHC = V CC ? 0.3 V to V CC + 0.3 V.
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