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| 型号： | CAT28C256HI-12T |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/14页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 256KBIT 120NS 28TSOP |
| 标准包装： | 1 |
| 格式 - 存储器： | EEPROMs - 并行 |
| 存储器类型： | EEPROM |
| 存储容量： | 256K (32K x 8) |
| 速度： | 120ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 28-TSSOP（0.465"，11.8mm 宽） |
| 供应商设备封装： | 28-TSOP（8x13.4） |
| 包装： | 标准包装 |
| 产品目录页面： | 808 (CN2011-ZH PDF) |
| 其它名称： | CAT28C256H13I-12TDKR CAT28C256H13I-12TDKR-ND CAT28C256HI-12TDKR |
CAT28C256
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Temperature Under Bias
Storage Temperature
Voltage on Any Pin with Respect to Ground (Note 1)
V CC with Respect to Ground
Package Power Dissipation Capability (T A = 25 ° C)
Lead Soldering Temperature (10 secs)
Output Short Circuit Current (Note 2)
Ratings
–55 to +125
–65 to +150
–2.0 V to +V CC + 2.0 V
? 2.0 to +7.0
1.0
300
100
Units
° C
° C
V
V
W
° C
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The minimum DC input voltage is ? 0.5 V. During transitions, inputs may undershoot to ? 2.0 V for periods of less than 20 ns. Maximum DC
voltage on output pins is V CC + 0.5 V, which may overshoot to V CC + 2.0 V for periods of less than 20 ns.
2. Output shorted for no more than one second. No more than one output shorted at a time.
Table 2. RELIABILITY CHARACTERISTICS (Note 3)
Symbol
N END
T DR
V ZAP
I LTH (Note 4)
Parameter
Endurance
Data Retention
ESD Susceptibility
Latch ? Up
Test Method
MIL ? STD ? 883, Test Method 1033
MIL ? STD ? 883, Test Method 1008
MIL ? STD ? 883, Test Method 3015
JEDEC Standard 17
Min
100,000
100
2,000
100
Max
Units
Cycles/Byte
Years
V
mA
3. These parameters are tested initially and after a design or process change that affects the parameters.
4. Latch ? up protection is provided for stresses up to 100 mA on address and data pins from ? 1 V to V CC + 1 V.
Table 3. D.C. OPERATING CHARACTERISTICS (V CC = 5 V ± 10%, unless otherwise specified.)
Limits
Symbol
I CC
I CCC (Note 5)
I SB
I SBC (Note 6)
I LI
I LO
V IH (Note 6)
V IL (Note 5)
Parameter
V CC Current (Operating, TTL)
V CC Current (Operating, CMOS)
V CC Current (Standby, TTL)
V CC Current (Standby, CMOS)
Input Leakage Current
Output Leakage Current
High Level Input Voltage
Low Level Input Voltage
Test Conditions
CE = OE = V IL ,
f = 8 MHz, All I/O’s Open
CE = OE = V ILC ,
f = 8 MHz, All I/O’s Open
CE = V IH , All I/O’s Open
CE = V IHC , All I/O’s Open
V IN = GND to V CC
V OUT = GND to V CC ,
CE = V IH
Min
? 10
? 10
2
? 0.3
Typ
Max
30
25
1
150
10
10
V CC + 0.3
0.8
Units
mA
mA
mA
m A
m A
m A
V
V
V OH
V OL
V WI
High Level Output Voltage
Low Level Output Voltage
Write Inhibit Voltage
I OH = ? 400 m A
I OL = 2.1 mA
2.4
3.5
0.4
V
V
V
5. V ILC = ? 0.3 V to +0.3 V.
6. V IHC = V CC ? 0.3 V to V CC + 0.3 V.
http://onsemi.com
3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CAT28C256L12 | 功能描述:电可擦除可编程只读存储器 (32kx8) 256K 5V 120 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| CAT28C256L-12 | 制造商:ON Semiconductor 功能描述:IC EEPROM 256KBIT PARALLEL DIP-28 |
| CAT28C256L15 | 功能描述:电可擦除可编程只读存储器 (32kx8) 256K 5V 150 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| CAT28C256L-15 | 制造商:ON Semiconductor 功能描述:Serial EEPROM IC |
| CAT28C256LA-12 | 功能描述:电可擦除可编程只读存储器 (32kx8) 256K 5V 120 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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