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参数资料
| 型号： | CAT28F512NA-12 |
| 元件分类： | PROM |
| 英文描述： | 64K X 8 FLASH 12V PROM, 120 ns, PQCC32 |
| 封装： | PLASTIC, LCC-32 |
| 文件页数： | 1/15页 |
| 文件大小： | 427K |
| 代理商： | CAT28F512NA-12 |
1
2004 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
HA
LOGEN FREE
TM
LEAD FREE
Doc. No. 1084, Rev. H
CAT28F512
512K-Bit CMOS Flash Memory
Licensed Intel second source
I/O0–I/O7
I/O BUFFERS
CE, OE LOGIC
SENSE
AMP
DATA
LATCH
ERASE VOLTAGE
SWITCH
PROGRAM VOLTAGE
SWITCH
COMMAND
REGISTER
CE
OE
WE
VOLTAGE VERIFY
SWITCH
ADDRESS
LA
TCH
Y-DECODER
X-DECODER
Y-GATING
524,288 BIT
MEMORY
ARRAY
A0–A15
BLOCK DIAGRAM
DESCRIPTION
The CAT28F512 is a high speed 64K x 8-bit electrically
erasable and reprogrammable Flash memory ideally
suited for applications requiring in-system or after-sale
code updates. Electrical erasure of the full memory
contents is achieved typically within 0.5 second.
It is pin and Read timing compatible with standard
EPROM and EEPROM devices. Programming and Erase
are performed through an operation and verify algo-
rithm. The instructions are input via the I/O bus, using a
two write cycle scheme. Address and Data are latched
to free the I/O bus and address bus during the write
operation.
The CAT28F512 is manufactured using Catalyst’s ad-
vanced CMOS floating gate technology. It is designed
to endure 100,000 program/erase cycles and has a data
retention of 10 years. The device is available in JEDEC
approved 32-pin plastic DIP, 32-pin PLCC or 32-pin
TSOP packages.
FEATURES
I Fast Read Access Time: 90/120/150 ns
I Low Power CMOS Dissipation:
–Active: 30 mA max (CMOS/TTL levels)
–Standby: 1 mA max (TTL levels)
–Standby: 100
A max (CMOS levels)
I High Speed Programming:
–10
s per byte
–1 Sec Typ Chip Program
I 12.0V
± 5% Programming and Erase Voltage
I Electronic Signature
I Commercial, Industrial and Automotive
Temperature Ranges
I Stop Timer for Program/Erase
I On-Chip Address and Data Latches
I JEDEC Standard Pinouts:
–32-pin DIP
–32-pin PLCC
–32-pin TSOP ( 8 x 20)
I 100,000 Program/Erase Cycles
I 10 Year Data Retention
I "Green" Package Options Available
相关PDF资料 |
PDF描述 |
|---|---|
| CAT28F512TR-15 | 64K X 8 FLASH 12V PROM, 150 ns, PDSO32 |
| CAT28F512TRA-90 | 64K X 8 FLASH 12V PROM, 90 ns, PDSO32 |
| CAT28LV256NA-25T | 32K X 8 EEPROM 3V, 250 ns, PQCC32 |
| CAT28LV256NI-20 | 32K X 8 EEPROM 3V, 200 ns, PQCC32 |
| CAT28LV256P-35 | 32K X 8 EEPROM 3V, 350 ns, PDIP28 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CAT28F512NA-12T | 制造商:ON Semiconductor 功能描述:Flash Parallel 5V 512Kbit 64K x 8bit 120ns 32-Pin PLCC T/R |
| CAT28F512NI12 | 制造商:Catalyst Semiconductor 功能描述: 制造商:ON Semiconductor 功能描述: |
| CAT28F512NI-12 | 功能描述:闪存 64 X 8 512K RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| CAT28F512NI-90 | 功能描述:闪存 64 X 8 512K RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| CAT28F512P-12 | 功能描述:闪存 64 X 8 512K RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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