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参数资料
| 型号： | CAT28F512NA-12 |
| 元件分类： | PROM |
| 英文描述： | 64K X 8 FLASH 12V PROM, 120 ns, PQCC32 |
| 封装： | PLASTIC, LCC-32 |
| 文件页数： | 3/15页 |
| 文件大小： | 427K |
| 代理商： | CAT28F512NA-12 |
CAT28F512
11
Doc. No. 1084, Rev. H
ADDRESSES
CE (E)
OE (G)
WE (W)
DATA (I/O)
VCC
VPP
tWC
tRC
tAS
tAH
tCS
tCH
tCS
tCH
tEHQZ
tDF
tGHWL
tWPH
tWHWH1
tWHGL
tWP
tDS
HIGH-Z
DATA IN
= 40H
DATA IN
= C0H
VALID
DATA OUT
tDH
tWP
tDH
tDS
tWP
tDH
tOLZ
tOE
tOH
tLZ
tCE
tVPEL
VPPH
VPPL
0V
5.0V
VCC POWER-UP
& STANDBY
SETUP PROGRAM
COMMAND
LATCH ADDRESS
& DATA
PROGRAMMING
PROGRAM
VERIFY
COMMAND
PROGRAM
VERIFICATION
VCC POWER-DOWN/
STANDBY
Erase-Verify Mode
The Erase-verify operation is performed on every byte
after each erase pulse to verify that the bits have been
erased.
Programming Mode
The programming operation is initiated using the pro-
gramming algorithm of Figure 7. During the first write
cycle, the command 40H is written into the command
register. During the second write cycle, the address of
the memory location to be programmed is latched on the
falling edge of WE, while the data is latched on the rising
edge of WE. The program operation terminates with the
next rising edge of WE. An integrated stop timer allows
for automatic timing control over this operation, eliminat-
ing the need for a maximum program timing specifica-
tion. Refer to AC Characteristics (Program/Erase) for
specific timing parameters.
Figure 6. A.C. Timing for Programming Operation
Program-Verify Mode
A Program-verify cycle is performed to ensure that all
bits have been correctly programmed following each
byte programming operation. The specific address is
already latched from the write cycle just completed, and
stays latched until the verify is completed. The Program-
verify operation is initiated by writing C0H into the
command register. An internal reference generates the
necessary high voltages so that the user does not need
to modify VCC. Refer to AC Characteristics (Program/
Erase) for specific timing parameters.
相关PDF资料 |
PDF描述 |
|---|---|
| CAT28F512TR-15 | 64K X 8 FLASH 12V PROM, 150 ns, PDSO32 |
| CAT28F512TRA-90 | 64K X 8 FLASH 12V PROM, 90 ns, PDSO32 |
| CAT28LV256NA-25T | 32K X 8 EEPROM 3V, 250 ns, PQCC32 |
| CAT28LV256NI-20 | 32K X 8 EEPROM 3V, 200 ns, PQCC32 |
| CAT28LV256P-35 | 32K X 8 EEPROM 3V, 350 ns, PDIP28 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CAT28F512NA-12T | 制造商:ON Semiconductor 功能描述:Flash Parallel 5V 512Kbit 64K x 8bit 120ns 32-Pin PLCC T/R |
| CAT28F512NI12 | 制造商:Catalyst Semiconductor 功能描述: 制造商:ON Semiconductor 功能描述: |
| CAT28F512NI-12 | 功能描述:闪存 64 X 8 512K RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| CAT28F512NI-90 | 功能描述:闪存 64 X 8 512K RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| CAT28F512P-12 | 功能描述:闪存 64 X 8 512K RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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