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| 型号： | CAT3200TDI-TE7 |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/12页 |
| 文件大小： | 0K |
| 描述： | IC REG BST SWITCHED CAP TSOT23-6 |
| 标准包装： | 1 |
| 类型： | 升压（升压），切换电容（充电泵） |
| 输出类型： | 可调式 |
| 输出数： | 1 |
| 输出电压： | 2.7 V ~ 6 V |
| 输入电压： | 2.7 V ~ 4.5 V |
| 频率 - 开关： | 2MHz |
| 电流 - 输出： | 100mA |
| 同步整流器： | 无 |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 包装： | 标准包装 |
| 供应商设备封装： | TSOT-23-6 |
| 其它名称： | CAT3200TDI-TE7DKR |
CAT3200, CAT3200 ? 5
Table 3. RECOMMENDED OPERATING CONDITIONS
V IN
C IN , C OUT , C FLY
I LOAD
Ambient Temperature Range
Parameters
Ratings
2.7 to 4.5
1
0 to 100
? 40 to +85
Units
V
m F
mA
° C
Table 4. ELECTRICAL SPECIFICATIONS
(Recommended operating conditions unless otherwise specified. C IN , C OUT , C FLY are 1 m F ceramic capacitors and V IN is set to 3.6 V.)
Symbol
V OUT
V LINE
V LOAD
F OSC
V R
h
I GND
I SHDN
V FB
I FB
R OL
T ON
V IHSHDN
Parameter
Regulated Output
Line Regulation
Load Regulation
Switching Frequency
Output Ripple Voltage
Efficiency
Ground Current
Shutdown Input Current
FB Voltage
FB Input Current
Open ? Loop Resistance
V OUT Turn ? on time (10% to 90%)
High Detect Shutdown Threshold
Conditions
I LOAD ≤ 40 mA, V IN ≥ 2.7 V
I LOAD ≤ 100 mA, V IN ≥ 3.1 V
3.1 V ≤ V IN ≤ 4.5 V, I LOAD = 50 mA
I LOAD = 10 mA to 100 mA, V IN = 3.6 V
I LOAD = 100 mA
CAT3200 ? 5 Only
I LOAD = 50 mA, V IN = 3 V, CAT3200 ? 5
I LOAD = 0 mA, SHDN = V IN
I LOAD = 0 mA, SHDN = 0 V
CAT3200 Only
CAT3200 Only
I LOAD = 100 mA, V IN = 3 V (Note 1)
I LOAD = 0 mA, V IN = 3 V
Min
4.8
1.3
1.22
? 50
Typ
5.0
6
20
2.0
30
80
1.6
1.27
10
0.5
0.8
Max
5.2
2.6
4
1
1.32
50
1.3
Units
V
mV
mV
MHz
mVp ? p
%
mA
m A
V
nA
W
ms
V
V ILSHDN
Low Detect Shutdown Threshold
0.4
V
I ROUT
I SC
T SD
T HYST
Reverse Leakage into OUT pin
Short ? circuit Output
Thermal Shutdown
Thermal Hysteresis
V OUT = 5 V, Shutdown mode (Note 2)
V OUT = 0 V
15
80
160
20
30
m A
mA
° C
° C
1. R OL = (2V IN ? V OUT )/I OUT
2. In the event of a controlled shutdown, the output will be isolated from the input, but will remain connected to the internal resistor feedback
network. This will cause a small level of reverse current to flow back into the device to ground.
http://onsemi.com
3
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