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| 型号： | CAT3661HV3-GT2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/13页 |
| 文件大小： | 0K |
| 描述： | IC LED DRVR WHT BCKLGHT 16TQFN |
| 标准包装： | 1 |
| 系列： | QUAD-Mode® |
| 拓扑： | 切换式电容器（充电泵） |
| 输出数： | 1 |
| 内部驱动器： | 是 |
| 类型 - 主要： | 背光 |
| 类型 - 次要： | 白色 LED |
| 频率： | 100kHz，130kHz |
| 电源电压： | 2 V ~ 5.5 V |
| 输出电压： | 1.3 V ~ 4.2 V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-WFQFN 裸露焊盘 |
| 供应商设备封装： | 16-TQFN（3x3） |
| 包装： | 标准包装 |
| 工作温度： | -40°C ~ 85°C |
| 其它名称： | CAT3661HV3-GT2OSDKR |
CAT3661
Table 4. ELECTRICAL OPERATING CHARACTERISTICS
(Recommended operating conditions unless ot herwise specified. C IN , C OUT ? , C FLY ar e 1 m F ceramic capacitors and V IN is set to 3.6 V.)
Parameter
Quiescent Current
Conditions
1x mode, no load, V IN = 3.4 V
Symbol
I Q
Min
Typ
130
Max
Units
m A
1.33x mode, no load, V IN = 3.0 V
1.5x mode, no load, V IN = 2.4 V
2x mode, no load, V IN = 2.1 V
160
160
160
Shutdown Current
LED Current Accuracy (Chip to Chip)
V EN = 0 V
(I LED ? I LEDNOM ) / I LEDNOM
I QSHDN
I LED ? ACC
± 2
1
m A
%
LED Current Accuracy
R SET = 60 k W
I LED ? 3
2.7
3
3.3
mA
Gain (I LED / I RSET )
I LED = 3 mA
Gain
300
RSET Regulated Voltage
Output Resistance (open loop)
I LED = 3 mA
1x mode
V RSET
R OUT
0.57
0.6
15
0.63
V
W
1.33x mode, V IN = 3 V
1.5x mode, V IN = 2.7 V
2x mode, V IN = 2.4 V
40
50
100
Charge Pump Frequency
1.33x and 2x mode
F OSC
100
kHz
1.5x mode
130
Input Current Limit Gain from I RSET
I LED = 3 mA
G I_MAX
1000
LED Channel Short Detection Voltage
LED Channel Short Test Current
LED Channel Open/Short Timeout
1x to 1.33x or 1.33x to 1.5x or 1.5x to 2x
Transition Thresholds at LED pin
1x Mode Transition Hysteresis
Transition Filter Delay
nFLTB, nFLTL low voltage threshold
(Open Drain)
I LED = 3 mA
V OUT – V LED < V SH
I LED = 3 mA
I LED = 3 mA
nFLTB, nFLTL Driven low 100 m A
pull up
V SH
I SH
T OLED
LED TH
V HYS
T DF
V FLTLO
1
5
2
100
360
400
0.2
V
m A
ms
mV
mV
m s
V
EN Pin
? Internal Pull ? down Resistor
? Logic High Level
? Logic Low Level
Thermal Shutdown
Thermal Hysteresis
R EN
V EHI
V ELO
T SD
T HYS
1.3
200
150
20
0.4
k W
V
V
_ C
_ C
Low battery Vin Trip point Voltage
ADJH = V IN
V LB
2.30
2.40
2.50
V
ADJL = GND
Low Battery ADJ Trip Point (Internal)
Low Battery Divider Network Resistance
V IN = 2.4 V
R HI + R LO
V ADJ
R ADJ
0.57
640
0.6
800
0.63
960
V
k W
Low Battery Resistor Divider Gain
(R HI + R LO ) / R LO
G ADJ
4
Low battery nFLTB Pulse Duration
Upon EN, VIN = 2.4 V
T BATTLO
400
500
600
ms
Undervoltage lockout (UVLO) threshold
V UVLO
1.9
V
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