参数资料
型号: CAT93C56VI-GT3
厂商: ON Semiconductor
文件页数: 3/17页
文件大小: 0K
描述: IC EEPROM 2KBIT 2MHZ 8SOIC
标准包装: 1
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 2K(256 x 8 或 128 x 16)
速度: 2MHz
接口: Microwire 3 线串行
电源电压: 1.8 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 标准包装
其它名称: CAT93C56VI-GT3OSDKR
CAT93C56, CAT93C57
Table 4. D.C. OPERATING CHARACTERISTICS, CAT93C56/57, Die Rev. E – Mature Product (CAT93C56, Rev. E –
NOT RECOMMENDED FOR NEW DESIGNS) (V CC = +1.8 V to +5.5 V, T A = ? 40 ° C to +125 ° C unless otherwise specified.)
Symbol
I CC1
I CC2
I SB1
I SB2
I LI
I LO
V IL1
V IH1
V IL2
V IH2
Parameter
Power Supply Current (Write)
Power Supply Current (Read)
Power Supply Current (Standby)
(x8 Mode)
Power Supply Current (Standby)
(x16 Mode)
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Input Low Voltage
Input High Voltage
Test Conditions
f SK = 1 MHz, V CC = 5.0 V
f SK = 1 MHz, V CC = 5.0 V
V IN = GND or V CC , CS = GND
ORG = GND
V IN = GND or V CC , CS = GND
ORG = Float or V CC
V IN = GND to V CC
V OUT = GND to V CC , CS = GND
4.5 V v V CC < 5.5 V
4.5 V v V CC < 5.5 V
1.8 V v V CC < 4.5 V
1.8 V v V CC < 4.5 V
Min
? 0.1
2
0
V CC x 0.7
Max
3
500
10
10
1
1
0.8
V CC + 1
V CC x 0.2
V CC + 1
Units
mA
m A
m A
m A
m A
m A
V
V
V
V
V OL1
V OH1
V OL2
V OH2
Output Low Voltage
Output High Voltage
Output Low Voltage
Output High Voltage
4.5 V v V CC < 5.5 V, I OL = 2.1 mA
4.5 V v V CC < 5.5 V, I OH = ? 400 m A
1.8 V v V CC < 4.5 V, I OL = 1 mA
1.8 V v V CC < 4.5 V, I OH = ? 100 m A
2.4
V CC ? 0.2
0.4
0.2
V
V
V
V
Table 5. PIN CAPACITANCE (T A = 25 ° C, f = 1 MHz, V CC = 5 V)
Symbol
C OUT (Note 4)
C IN (Note 4)
Test
Output Capacitance (DO)
Input Capacitance (CS, SK, DI, ORG)
Conditions
V OUT = 0 V
V IN = 0 V
Min
Typ
Max
5
5
Units
pF
pF
4. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC ? Q100
and JEDEC test methods.
http://onsemi.com
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