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参数资料
| 型号： | CAT93C66ZD4E-1.8-GT3REVE |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | PROM |
| 英文描述： | 256 X 16 MICROWIRE BUS SERIAL EEPROM, DSO8 |
| 封装： | 3 X 3 MM, GREEN, MO-229C, TDFN-8 |
| 文件页数： | 12/17页 |
| 文件大小： | 196K |
| 代理商： | CAT93C66ZD4E-1.8-GT3REVE |
CAT93C66
Doc. No. MD-1089 Rev. S
4
2008 SCILLC. All rights reserved
Characteristics subject to change without notice
A.C. CHARACTERISTICS
(1) (NEW PRODUCT, DIE REV. G)
VCC = +1.8V to +5.5V, TA = -40°C to +125°C, unless otherwise specified.
Limits
Symbol
Parameter
Min
Max
Units
tCSS
CS Setup Time
50
ns
tCSH
CS Hold Time
0
ns
tDIS
DI Setup Time
100
ns
tDIH
DI Hold Time
100
ns
tPD1
Output Delay to 1
0.25
s
tPD0
Output Delay to 0
0.25
s
tHZ
(2)
Output Delay to High-Z
100
ns
tEW
Program/Erase Pulse Width
5
ms
tCSMIN
Minimum CS Low Time
0.25
s
tSKHI
Minimum SK High Time
0.25
s
tSKLOW
Minimum SK Low Time
0.25
s
tSV
Output Delay to Status Valid
0.25
s
SKMAX
Maximum Clock Frequency
DC
2000
kHz
A.C. CHARACTERISTICS
(1) (MATURE PRODUCT, DIE REV E – NOT RECOMMENDED FOR NEW DESIGN)
Limits
VCC = 1.8V - 5.5V
VCC = 2.5V - 5.5V
VCC = 4.5V - 5.5V
Symbol
Parameter
Min
Max
Min
Max
Min
Max
Units
tCSS
CS Setup Time
200
100
50
ns
tCSH
CS Hold Time
0
ns
tDIS
DI Setup Time
400
200
100
ns
tDIH
DI Hold Time
400
200
100
ns
tPD1
Output Delay to 1
1
0.5
0.25
s
tPD0
Output Delay to 0
1
0.5
0.25
s
tHZ
(2)
Output Delay to High-Z
400
200
100
ns
tEW
Program/Erase Pulse Width
10
ms
tCSMIN
Minimum CS Low Time
1
0.5
0.25
s
tSKHI
Minimum SK High Time
1
0.5
0.25
s
tSKLOW
Minimum SK Low Time
1
0.5
0.25
s
tSV
Output Delay to Status Valid
1
0.5
0.25
s
SKMAX
Maximum Clock Frequency
DC
250
DC
500
DC
1000
kHz
Notes
:
(1)
Test conditions according to “A.C. Test Conditions” table.
(2)
These parameters are tested initially and after a design or process change that affects the parameter according to appropriate
AEC-Q100 and JEDEC test methods.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CAT93C66ZD4I | 制造商:Catalyst Semiconductor 功能描述: |
| CAT93C76LI-G | 功能描述:电可擦除可编程只读存储器 (1024x8)/(512x16) 8K RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| CAT93C76VGI | 制造商:Rochester Electronics LLC 功能描述: 制造商:Catalyst Semiconductor 功能描述: |
| CAT93C76VGI-T3 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Catalyst Semiconductor 功能描述: |
| CAT93C76VI-G | 功能描述:电可擦除可编程只读存储器 (1024x8)/(512x16) 8K RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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