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参数资料
| 型号： | CAT93C66ZD4E-1.8-GT3REVE |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | PROM |
| 英文描述： | 256 X 16 MICROWIRE BUS SERIAL EEPROM, DSO8 |
| 封装： | 3 X 3 MM, GREEN, MO-229C, TDFN-8 |
| 文件页数： | 15/17页 |
| 文件大小： | 196K |
| 代理商： | CAT93C66ZD4E-1.8-GT3REVE |
CAT93C66
2008 SCILLC. All rights reserved
7
Doc. No. MD-1089 Rev. S
Characteristics subject to change without notice
Write
After receiving a WRITE command (Figure 4), address
and the data, the CS (Chip Select) pin must be
deselected for a minimum of tCSMIN. The falling edge of
CS will start the self clocking clear and data store cycle
of the memory location specified in the instruction. The
clocking of the SK pin is not necessary after the device
has entered the self clocking mode. The ready/busy
status of the CAT93C66 can be determined by
selecting the device and polling the DO pin. Since this
device features Auto-Clear before write, it is NOT
necessary to erase a memory location before it is
written into.
Erase
Upon receiving an ERASE command and address,
the CS (Chip Select) pin must be deasserted for a
minimum of tCSMIN (Figure 5). The falling edge of CS
will start the self clocking clear cycle of the selected
memory location. The clocking of the SK pin is not
necessary after the device has entered the self
clocking mode. The ready/ busy status of the
CAT93C66 can be determined by selecting the device
and polling the DO pin. Once cleared, the content of a
cleared location returns to a logical “1” state.
Figure 3. EWEN/EWDS Instruction Timing
Figure 4. Write Instruction Timing
Figure 5. Erase Instruction Timing
CS
DI
STANDBY
10
0
*
* ENABLE = 11
DISABLE = 00
SK
CS
DI
DO
tCSMIN
STANDBY
HIGH-Z
10
1
AN AN-1
A0
DN
D0
BUSY
READY
STATUS
VERIFY
tSV
tHZ
tEW
SK
CS
DI
DO
STANDBY
HIGH-Z
1
AN
AN-1
BUSY
READY
STATUS VERIFY
tSV
tHZ
tEW
tCS
11
A0
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CAT93C66ZD4I | 制造商:Catalyst Semiconductor 功能描述: |
| CAT93C76LI-G | 功能描述:电可擦除可编程只读存储器 (1024x8)/(512x16) 8K RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| CAT93C76VGI | 制造商:Rochester Electronics LLC 功能描述: 制造商:Catalyst Semiconductor 功能描述: |
| CAT93C76VGI-T3 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Catalyst Semiconductor 功能描述: |
| CAT93C76VI-G | 功能描述:电可擦除可编程只读存储器 (1024x8)/(512x16) 8K RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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