参数资料
型号: CAT93C86JI-TE13
厂商: ON SEMICONDUCTOR
元件分类: PROM
英文描述: 1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
封装: SOIC-8
文件页数: 3/10页
文件大小: 80K
代理商: CAT93C86JI-TE13
2
93C46/56/57/66/86
Doc. No. 1023, Rev. J
D.C. OPERATING CHARACTERISTICS
VCC = +1.8V to +6.0V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
ICC1
Power Supply Current
fSK = 1MHz
3
mA
(Operating Write)
VCC = 5.0V
ICC2
Power Supply Current
fSK = 1MHz
500
A
(Operating Read)
VCC = 5.0V
ISB1
Power Supply Current
CS = 0V
10
A
(Standby) (x8 Mode)
ORG=GND
ISB2(5)
Power Supply Current
CS=0V
0
A
(Standby) (x16Mode)
ORG=Float or VCC
ILI
Input Leakage Current
VIN = 0V to VCC
1
A
ILO
Output Leakage Current
VOUT = 0V to VCC,1
A
(Including ORG pin)
CS = 0V
VIL1
Input Low Voltage
4.5V
≤ VCC < 5.5V
-0.1
0.8
V
VIH1
Input High Voltage
4.5V
≤ VCC < 5.5V
2
VCC + 1
V
VIL2
Input Low Voltage
1.8V
≤ VCC < 4.5V
0
VCC x 0.2
V
VIH2
Input High Voltage
4.8V
≤ VCC < 4.5V
VCC x 0.7
VCC+1
V
VOL1
Output Low Voltage
4.5V
≤ VCC < 5.5V
0.4
V
IOL = 2.1mA
VOH1
Output High Voltage
4.5V
≤ VCC < 5.5V
2.4
V
IOH = -400
A
VOL2
Output Low Voltage
1.8V
≤ VCC < 4.5V
0.2
V
IOL = 1mA
VOH2
Output High Voltage
1.8V
≤ VCC < 4.5V
VCC - 0.2
V
IOH = -100
A
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias .................. -55
°C to +125°C
Storage Temperature ........................ -65
°C to +150°C
Voltage on any Pin with
Respect to Ground(1) ............. -2.0V to +VCC +2.0V
VCC with Respect to Ground ................ -2.0V to +7.0V
Package Power Dissipation
Capability (TA = 25
°C) ................................... 1.0W
Lead Soldering Temperature (10 secs) ............ 300
°C
Output Short Circuit Current(2) ........................ 100 mA
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation of
the device at these or any other conditions outside of those
listed in the operational sections of this specification is not
implied. Exposure to any absolute maximum rating for
extended periods may affect device performance and
reliability.
RELIABILITY CHARACTERISTICS
Symbol
Parameter
Reference Test Method
Min
Typ
Max
Units
NEND(3)
Endurance
MIL-STD-883, Test Method 1033
1,000,000
Cycles/Byte
TDR(3)
Data Retention
MIL-STD-883, Test Method 1008
100
Years
VZAP(3)
ESD Susceptibility
MIL-STD-883, Test Method 3015
2000
Volts
ILTH(3)(4)
Latch-Up
JEDEC Standard 17
100
mA
Note:
(1) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC
voltage on output pins is VCC +0.5V, which may overshoot to VCC +2.0V for periods of less than 20 ns.
(2) Output shorted for no more than one second. No more than one output shorted at a time.
(3) This parameter is tested initially and after a design or process change that affects the parameter.
(4) Latch-up protection is provided for stresses up to 100 mA on address and data pins from –1V to VCC +1V.
(5) Standby Current (ISB2)=0A (<900nA) for 93C46/56/57/66, (ISB2)=2A for 93C86.
相关PDF资料
PDF描述
CAT93C86WA 1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
CAT93C46SA-1.8TE13REVH 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
CAT93C46SA-REVH 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
CAT93C5621KA-42TE13 SPECIALTY MICROPROCESSOR CIRCUIT, PDSO8
CAT93C8631S-30TE13 SPECIALTY MICROPROCESSOR CIRCUIT, PDSO8
相关代理商/技术参数
参数描述
CAT93C86KI 制造商:Catalyst Semiconductor 功能描述:
CAT93C86L 功能描述:电可擦除可编程只读存储器 (2048x8)(1024x16)16K RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
CAT93C86L-1.8 功能描述:电可擦除可编程只读存储器 (2048x8)(1024x16)16K RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
CAT93C86LA 功能描述:电可擦除可编程只读存储器 (2048x8)(1024x16)16K RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
CAT93C86LI 功能描述:电可擦除可编程只读存储器 (2048x8)(1024x16)16K RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8