参数资料
型号: CAV24C32YE-GT3
厂商: ON Semiconductor
文件页数: 2/10页
文件大小: 0K
描述: IC EEPROM I2C SRL 32KB 8TSSOP
标准包装: 3,000
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 32K (4K x 8)
速度: 100kHz,400kHz
接口: I²C,2 线串口
电源电压: 2.5 V ~ 5.5 V
工作温度: -40°C ~ 125°C
封装/外壳: 8-TSSOP(0.173",4.40mm 宽)
供应商设备封装: 8-TSSOP
包装: 带卷 (TR)
CAV24C32
DEVICE MARKINGS
(TSSOP ? 8)
C32F
AYMXXX
G
(SOIC ? 8)
24C32F
AYMXXX
G
C32F
A
= Specific Device Code
= Assembly Location
Y
M
XXX
G
= Production Year (Last Digit)
= Production Month (1-9, O, N, D)
= Last Three Digits of Assembly Lot Number
= Pb ? Free Package
24C32F
A
Y
M
XXX
G
= Specific Device Code
= Assembly Location
= Production Year (Last Digit)
= Production Month (1-9, O, N, D)
= Last Three Digits of Assembly Lot Number
= Pb ? Free Package
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Storage Temperature
Voltage on any Pin with Respect to Ground (Note 1)
Ratings
–65 to +150
–0.5 to +6.5
Units
° C
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. During input transitions, voltage undershoot on any pin should not exceed ? 1 V for more than 20 ns. Voltage overshoot on pins A 0 , A 1 , A 2
and WP should not exceed V CC + 1 V for more than 20 ns, while voltage on the I 2 C bus pins, SCL and SDA, should not exceed the absolute
maximum ratings, irrespective of V CC .
Table 2. RELIABILITY CHARACTERISTICS (Note 2)
Symbol
N END (Note 3)
T DR
Endurance
Data Retention
Parameter
Min
1,000,000
100
Units
Program/Erase Cycles
Years
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC ? Q100
and JEDEC test methods.
3. Page Mode, V CC = 5 V, 25 ° C.
Table 3. D.C. OPERATING CHARACTERISTICS ( V CC = 2.5 V to 5.5 V, T A = ? 40 ° C to +125 ° C, unless otherwise speci ? ed.)
Symbol
I CCR
I CCW
Parameter
Read Current
Write Current
Test Conditions
Read, f SCL = 400 kHz
Write, f SCL = 400 kHz
Min
Max
1
2
Units
mA
mA
I SB
Standby Current
All I/O Pins at GND or V CC
T A = ? 40 ° C to +125 ° C
5
m A
I L
V IL
I/O Pin Leakage
Input Low Voltage
Pin at GND or V CC
? 0.5
2
0.3 x V CC
m A
V
V IH
Input High Voltage
A 0 , A 1 , A 2 and WP
0.7 x V CC
V CC + 0.5
V
SCL and SDA
0.7 x V CC
5.5
V OL
Output Low Voltage
V CC > 2.5 V, I OL = 3 mA
0.4
V
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