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参数资料
| 型号： | CAV4201TD-GT3 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/12页 |
| 文件大小： | 0K |
| 描述： | IC LED DVR 350MA STP-DN TSOT23-5 |
| 标准包装： | 3,000 |
| 系列： | * |
CAV4201
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
VBAT, SW, CTRL
RSET
Switch SW peak current
Storage Temperature Range
Junction Temperature Range
Lead Temperature
Ratings
? 0.3 to +40
? 0.3 to +5
1
? 65 to +160
? 40 to +150
300
Units
V
V
A
_ C
_ C
_ C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 2. RECOMMENDED OPERATING CONDITIONS
Parameters
VBAT voltage (Notes 1, 2)
SW voltage
Ambient Temperature Range
LED Current
Switching Frequency
Ratings
6.5 to 36 (Note 1)
0 to 36
? 40 to +125
50 to 350
50 to 1000
Units
V
V
_ C
mA
kHz
1. The VBAT pin voltage should be at least 3 V greater than the total sum of the LED forward voltages in order to operate at nominal LED current.
2. During power ? up, the slew rate of the input supply should be greater than 1 m s for every 5 V increase of VBAT.
Table 3. ELECTRICAL CHARACTERISTICS
(V IN = 13 V, ambient temperature of 25 ° C (over recommended operating conditions unless otherwise specified))
Symbol
I Q
I SD
V FB
I LED
Parameter
Operating Supply Current on VBAT pin
Idle Mode Supply Current on VBAT pin
RSET Pin Voltage
Programmed LED Current
Conditions
CTRL = GND
2 LEDs with I LED = 300 mA
R1 = 33 k W
Min
1.15
Typ
0.4
90
1.2
100
Max
1
1.25
Units
mA
m A
V
mA
R1 = 10 k W
R1 = 8.25 k W
270
300
350
330
V CTRL ? FULL
CTRL Voltage for 100% Brightness
2.6
3.1
V
V CTRL ? EN
CTRL Voltage to Enable LEDs
LED enable voltage threshold
0.9
1.2
V
V CTRL ? SD
CTRL Voltage to Shutdown LEDs
LED disable voltage threshold
0.4
0.9
V
I CTRL
CTRL pin input bias
V CTRL = 3 V
40
80
m A
V CTRL = 12 V
200
R SW
T SD
T HYST
h
Switch “On” Resistance
Thermal Shutdown
Thermal Hysteresis
Efficiency
I SW = 300 mA
Typical Application Circuit
0.9
150
20
86
1.5
W
° C
° C
%
http://onsemi.com
2
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