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| 型号： | CC2480A1RTC |
| 厂商： | Texas Instruments |
| 文件页数： | 10/48页 |
| 文件大小： | 0K |
| 描述： | IC Z-ACCEL ZIGBEE PROC 48-VQFN |
| 产品培训模块： | RFID Technology and Applications |
| 标准包装： | 260 |
| 系列： | CC2480 |
| 频率： | 2.4GHz |
| 数据传输率 - 最大： | 115kBaud |
| 调制或协议： | 802.15.4 Zigbee |
| 应用： | AMR，ISM，SRD |
| 功率 - 输出： | 0dBm |
| 灵敏度： | -92dBm |
| 电源电压： | 2 V ~ 3.6 V |
| 电流 - 接收： | 27mA |
| 数据接口： | PCB，表面贴装 |
| 天线连接器： | PCB，表面贴装 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 48-VFQFN 裸露焊盘 |
| 包装： | 托盘 |
| 配用： | EZ430-RFZACC06-ND - EZ430-RFZACC06 296-23357-ND - KIT DEMO FOR CC2480 |
| 其它名称： | 296-23580 |
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CC2480
Table 6: RF Transmit Parameters
Parameter
Nominal output
power
Min
Typ
0
Max
Unit
dBm
Condition/Note
Delivered to a single ended 50 ? load through a balun.
[1] requires minimum –3 dBm
Harmonics
2 harmonic
3 harmonic
4
harmonic
5 harmonic
nd
rd
th
th
Spurious emission
30 - 1000 MHz
1– 12.75 GHz
1.8 – 1.9 GHz
5.15 – 5.3 GHz
-50.7
-55.8
-54.2
-53.4
-47
-43
-58
-56
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
Measurement conducted with 100 kHz resolution bandwidth on
spectrum analyzer. Output Delivered to a single ended 50 ? load
through a balun.
Maximum output power.
Texas Instruments CC2480 EM reference design complies with
EN 300 328, EN 300 440, FCC CFR47 Part 15 and ARIB STD-
T-66.
Transmit on 2480MHz under FCC is supported by duty-cycling
The peak conducted spurious emission is -47 dBm @ 192 MHz
which is in an EN 300 440 restricted band limited to -54 dBm. All
radiated spurious emissions are within the limits of
ETSI/FCC/ARIB. Conducted spurious emission (CSE) can be
reduced with a simple band pass filter connected between
matching network and RF connector (1.8 pF in parallel with 1.6
nH reduces the CSE by 20 dB), this filter must be connected to
good RF ground.
EVM
11
%
Measured as defined by [1]
[1] requires max. 35 %
Optimum load
impedance
60
+ j164
?
Differential impedance as seen from the RF-port ( RF_P and
RF_N ) towards the antenna 2 .
5.4
32 MHz Crystal Oscillator
Measured on Texas Instruments CC2480 EM reference design with T A =25 ° C and VDD=3.0V
unless stated otherwise.
Table 7: 32 MHz Crystal Oscillator Parameters
Parameter
Min
Typ
Max
Unit
Condition/Note
Crystal frequency
32
MHz
Crystal frequency
- 40
40
ppm
Including aging and temperature dependency, as specified by [1]
accuracy
requirement
ESR
C 0
C L
6
1
10
16
1.9
13
60
7
16
?
pF
pF
Simulated over operating conditions
Simulated over operating conditions
Simulated over operating conditions
Start-up time
212
μs
5.5
32.768 kHz Crystal Oscillator
Measured on Texas Instruments CC2480 EM reference design with T A =25 ° C and VDD=3.0V
unless stated otherwise.
2
This is for 2440MHz
CC2480 Data Sheet SWRS074A
Page 10 of 43
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