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| 型号： | CD1005-S0180 |
| 厂商： | Bourns Inc. |
| 文件页数： | 1/6页 |
| 文件大小： | 270K |
| 描述： | DIODE 90V 0.1A 2-PIN SOD-323F |
| 标准包装： | 1 |
| 二极管类型： | 标准 |
| 电压 - (Vr)（最大）： | 80V |
| 电流 - 平均整流 (Io)： | 100mA |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1V @ 100mA |
| 速度： | 小信号 =< 200mA（Io），任意速度 |
| 反向恢复时间(trr)： | 4ns |
| 电流 - 在 Vr 时反向漏电： | 100nA @ 80V |
| 电容@ Vr, F： | 4pF @ 1V，100MHz |
| 安装类型： | * |
| 封装/外壳： | * |
| 供应商设备封装： | * |
| 包装： | * |
| 其它名称： | CD1005-S0180DKR |
          Features ■ RoHS compliant* ■ Leadless ■ High speed Applications ■ Cellular phones ■ PDAs ■ Desktop PCs and notebooks ■ Digital cameras ■ MP3 players Switching Chip Diode Series - 0603/1005 *RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/ EU June 8, 2011. Speci? cations are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in differ- ent applications and actual device performance may vary over time. Users should verify actual device performance in their speci? c applications. General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers small-signal high-speed Switching Diodes for switching digital signal applications, in compact chip package 0603 and 1005 size format, which offer PCB real estate savings and are considerably smaller than competitive parts. The Switching Diodes offer a forward current of 100 mA or 150 mA, a reverse voltage of 80 V or 75 V and also have a low leakage reverse current option. The diodes are RoHS compliant with Cu/Ni/Au plated terminations and are compatible with lead-free manufacturing processes, conforming to many industry and government regulations on lead-free components. Bourns? Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place equipment and their ? at con? guration minimizes roll away. Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Absolute Ratings (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol CDxxxx-S0180 CD1005-S01575 CDxxxx-S0180R Unit Forward Voltage (Max.) VF 1.00 = 100 mA) (If 1.00 = 50 mA) (If 1.00 = 100 mA) (If V Capacitance Between Terminals (Max.) CT 4 (f = 100 MHz, Vr = 1 V DC) pF Reverse Recovery Time (Max.) trr 4 = 10 mA, RL = 50 ohms) (Vr = 6 V, I f nS Reverse Current (Max.) IR 0.1 (Vr = 80 V) 2.5 (Vr = 75 V) 0.05 (Vr = 75 V) μA Parameter Symbol CDxxxx-S0180 CD1005-S01575 CDxxxx-S0180R Unit Repetitive Peak Reverse Voltage VRRM 90 100 90 V Reverse Voltage VR 80 75 80 V Average Forward Current Io 100 150 100 mA Forward Current, Surge Peak Isurge 1** 4*** 1** A Power Dissipation CD0603 CD1005 PD 150 300 mW Storage Temperature TSTG -40 to +125 °C Junction Temperature TJ -40 to +125 °C *RoHS COMPLIANT S3 How to Order CD 0603 - S 01 80 R Common Code Chip Diode Package ? 0603 ? 1005 Model S = High-Speed Switching Average Forward Current (Io) Code 01 = 100 mA 015 = 150 mA (Code x 1000 mA = Average Forward Current) Reverse Voltage (VR) Code 80 = 80 V 75 = 75 V Reverse Current Suf? x R = Low Leakage I R (CDxxxx-S0180R) Asia-Paci? c: Tel: +886-2 2562-4117 ? Fax: +886-2 2562-4116 Europe: Tel: +41-41 768 5555 ? Fax: +41-41 768 5510 The Americas: Tel: +1-951 781-5500 ? Fax: +1-951 781-5700 www.bourns.com ** Condition: 8.3 ms single half sine-wave superimposed on rate load (JEDEC method). *** Condition: 1.0 μs single half sine-wave superimposed on rate load (JEDEC method). |
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相关代理商/技术参数 |
参数描述 |
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| CD1005-S0180R | 功能描述:二极管 - 通用，功率，开关 IO=100mA VR=80V LOW LEAKAGE RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| CD1005-T05C | 功能描述:TVS 二极管 - 瞬态电压抑制器 SCHOTTKY BARRIER DIODE SMD RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| CD1005-T12C | 功能描述:TVS 二极管 - 瞬态电压抑制器 SCHOTTKY BARRIER DIODE SMD RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| CD1005-T24C | 功能描述:TVS 二极管 - 瞬态电压抑制器 SCHOTTKY BARRIER DIODE SMD RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| CD1005-Z10 | 功能描述:稳压二极管 ZENER DIODE SMD 10VOLT RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
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