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参数资料
| 型号： | CDSOT23-S2004 |
| 厂商： | BOURNS INC |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 中文描述： | UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 296K |
| 代理商： | CDSOT23-S2004 |
Features
■ Lead free*
■ High-speed switching
■ Surge withstand
■ RoHS compliant**
Applications
■ Personal Digital Assistants (PDAs)
■ Mobile phones and accessories
■ Memory card protection
■ SIM card port protection
■ Portable electronics
Maximum Ratings (@ TA = 25 °C Unless Otherwise Noted)
CDSOT23-S2004 - Switching Diode Array
*No lead detected in standard tests of homogeneous materials.
**RoHS Directive 2002/95/EC Jan 27, 2003 including Annex.
Specications are subject to change without notice.
Customers should verify actual device performance in their specic applications.
Notes:
1. Short duration pulse test used to minimize self-heating effect.
2. Part mounted on FR-4 board with recommended pad layout.
General Information
The Bourns Model CDSOT23-S2004 device is a high-speed switching diode array
offering a Working Peak Reverse Voltage of 240 V and a Minimum Breakdown Voltage
of 300 V. The SOT23 packaged device will mount directly onto the industry standard
SOT23 footprint. Bourns Chip Diodes conform to JEDEC standards, are easy to
handle with standard pick and place equipment and their at conguration minimizes
roll away.
Parameter
Symbol
CDSOT23-S2004
Unit
Peak Repetitive Peak Reverse Voltage
VRRM
300
V
Working Peak Reverse Voltage
VRWM
240
V
DC Blocking Voltage
VR
240
V
RMS Reverse Voltage
VR (RMS)
170
V
Forward Continuous Current (Note 2)
IFM
225
mA
Peak Repetitive Forward Current (Note 2)
IFRM
625
mA
Peak Forward Surge Current
@ t = 1.0 s
IFSM
4.0
1.0
A
Power Dissipation (Note 2)
PD
350
mW
Storage Temperature
TSTG
-55 to +150
°C
Operating Temperature
TOPR
-55 to +150
°C
3
12
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Reverse Breakdown Voltage (Note 1)
@ IR = 100 A
VBR
300
V
Reverse Leakage Current (Note 1)
@ VR = 240 V
IR
100
nA
Forward Voltage
@ IF = 20 mA
@ IF = 100 mA
VF
0.50
0.75
0.87
1.00
V
Diode Capacitance @ VR = 0 V, f = 1 MHz
CT
35
pF
Thermal Resistance, Junction to Ambient
(Note 2)
RθJA
357
°C/W
Reverse Recovery Time
@ IF = IR = 30 mA, IRR = 3.0 mA, RL = 100 Ω
trr
50
ns
**RoHS
COMPLIANT
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CDSOT23-SLVU2.8 | 功能描述:TVS二极管阵列 SOT-23 2.8V Low Capacitance RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| CDSOT23-SM712 | 功能描述:TVS二极管阵列 SOT-23 7V 600W Low Capacitance RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| CDSOT23-SR208 | 功能描述:TVS二极管阵列 STEERING DIODE ARRAY RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| CDSOT23-SR724 | 功能描述:TVS二极管阵列 STEERING DIODE ARRAY RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| CDSOT23-SRV05-4 | 功能描述:TVS二极管阵列 SOT-23 5V 4DIODE Low Capacitance RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
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