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参数资料
| 型号： | CET3906E |
| 厂商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 中文描述： | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | 1 X 0.40 MM, ROHS COMPLIANT, LEADLESS, TLP, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 183K |
| 代理商： | CET3906E |
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current
IC
200
mA
Power Dissipation (Note 1)
PD
250
mW
Power Dissipation (Note 2)
PD
430
mW
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +150
°C
Thermal Resistance (Note 1)
ΘJA
500
°C/W
Thermal Resistance (Note 2)
ΘJA
290
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
NPN
PNP
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICEV
VCE=30V, VEB=3.0V
50
nA
BVCBO
IC=10μA
60
115
90
V
BVCEO
IC=1.0mA
40
60
55
V
BVEBO
IE=10μA
6.0
7.5
7.9
V
VCE(SAT)
IC=10mA, IB=1.0mA
0.057
0.050
0.100
V
CET3904E NPN
CET3906E PNP
ENHANCED SPECIFICATION
COMPLEMENTARY PICOminiTM
SILICON TRANSISTORS
SOT-883L CASE
Central
Semiconductor Corp.
TM
R1 (5-MAY 2008)
DESCRIPTION:
The Central Semiconductor CET3904E / CET3906E
Low
VCE(SAT) NPN and PNP Transistors,
respectively, are designed for applications where ultra
small size and power dissipation are the prime
requirements. Packaged in a Tiny Leadless Package
TLP, these components provide performance
characteristics suitable for the most demanding size
constrained applications.
Enhanced specification
MARKING CODES: CET3904E: C
CET3906E: D
Notes: (1) FR-4 epoxy PC board, standard mounting conditions
(2) FR-4 epoxy PC board with collector mounting pad area of 1 cm2
Bottom View
Top View
FEATURES:
Device is Halogen Free by design
Power Dissipation 250mW
Low VCE(SAT) 0.1V Typ @ 50mA
Small, TLP 1x0.4mm, SOT-883L Leadless,
Low Profile, Surface Mount Package
APPLICATIONS:
DC / DC Converters
Battery powered devices including
Cell Phones and Digital Cameras
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相关代理商/技术参数 |
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| CET3906E TR | 制造商:Central Semiconductor Corp 功能描述:Trans GP BJT PNP 40V 0.2A 3-Pin SOT-883L T/R |
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