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参数资料
| 型号： | CFY25-20 |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | HiRel X-Band GaAs Low Noise / General Purpose MESFET |
| 中文描述： | 伊雷尔X波段功率低噪声/通用场效应晶体管 |
| 文件页数： | 1/8页 |
| 文件大小： | 2088K |
| 代理商： | CFY25-20 |
CFY25
Semiconductor Group
1 of 8
Draft D, Sep. 0000
HiRel
X-Band
GaAs Low Noise / General Purpose MESFET
HiRel
Discrete and Microwave
Semiconductor
For professional pre- and driver-amplifiers
For frequencies from 500 MHz to 20 GHz
Hermetically sealed microwave package
Low noise figure, high gain, moderate power
Space Qualification Expected 1998
ESA/SCC Detail Spec. No.: 5613/008,
Type Variant No.s 01 to 05
1
2
3
4
ESD
:
E
lectro
s
tatic
d
ischarge sensitive device, observe handling precautions!
Type
Marking
Ordering Code Pin Configuration
Package
1
2
3
4
CFY25-P (ql)
CFY25-23 (ql)
CFY25-23P (ql)
CFY25-20 (ql)
CFY25-20P (ql)
-
see below
G
S
D
S
Micro-X
CFY25-nnl: specifies noise, gain and output power level (see electrical characteristics)
(ql) Quality Level:
P: Professional Quality,
Ordering Code:
Q62703F120
H: High Rel Quality,
Ordering Code:
on request
S: Space Quality,
Ordering Code:
on request
ES: ESA Space Quality,
Ordering Code:
Q62703F119
(see order instructions for ordering example)
相关PDF资料 |
PDF描述 |
|---|---|
| CFY25-20P | HiRel X-Band GaAs Low Noise / General Purpose MESFET |
| CFY25-23 | HiRel X-Band GaAs Low Noise / General Purpose MESFET |
| CFY25-23P | HiRel X-Band GaAs Low Noise / General Purpose MESFET |
| CFY25-P | HiRel X-Band GaAs Low Noise / General Purpose MESFET |
| CFY25 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CFY25-20 (S) | 功能描述:射频GaAs晶体管 HiRel X-Band GaAs Gen Purpose MESFET RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| CFY25-20P | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:HiRel X-Band GaAs Low Noise / General Purpose MESFET |
| CFY25-23 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:HiRel X-Band GaAs Low Noise / General Purpose MESFET |
| CFY25-23 (P) | 功能描述:射频GaAs晶体管 HiRel X-Band GaAs Gen Purpose MESFET RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| CFY25-23P | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:HiRel X-Band GaAs Low Noise / General Purpose MESFET |
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