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参数资料
| 型号： | CFY25-20 |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | HiRel X-Band GaAs Low Noise / General Purpose MESFET |
| 中文描述： | 伊雷尔X波段功率低噪声/通用场效应晶体管 |
| 文件页数： | 4/8页 |
| 文件大小： | 2088K |
| 代理商： | CFY25-20 |
CFY25
Semiconductor Group
4 of 8
Draft D, Sep. 0000
Electrical Characteristics
(continued)
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Noise figure
1)
V
DS
= 3 V, I
D
= 15 mA, f = 12 GHz
NF
dB
CFY25-P
-
< 2.3
-
CFY25-20, -20P
-
1.9
2.1
CFY25-23, -23P
-
2.2
2.4
Associated gain.
1)
V
DS
= 3 V, I
D
= 15 mA, f = 12 GHz
G
a
dB
CFY25-P
-
> 8.5
-
CFY25-20, -20P
8.5
9
-
CFY25-23, -23P
8.0
8.7
-
Output power at 1 dB gain compression
2)
V
DS
= 3 V, I
D(RF off)
= 20 mA, f = 12 GHz
P
1dB
dBm
CFY25-20, -23
-
15
-
CFY25-20P, 23P, -P
14
15
-
Linear power gain
2)
V
DS
= 3 V, I
D
= 20 mA, f = 12 GHz,
P
in
= 0 dBm
G
lp
dB
CFY25-20
-
9.2
-
CFY25-23
-
8.5
-
CFY25-20P, -P
8.5
9.2
-
CFY25-23P
8.0
8.5
-
Notes.:
1) Noise figure / sssociated gain characteristics given for minimum noise figure matching
conditions (fixed generic matching, no fine-tuning).
2) Output power / linear power gain characteristics given for optimum output power matching
conditions (fixed generic matching, no fine-tuning).
相关PDF资料 |
PDF描述 |
|---|---|
| CFY25-20P | HiRel X-Band GaAs Low Noise / General Purpose MESFET |
| CFY25-23 | HiRel X-Band GaAs Low Noise / General Purpose MESFET |
| CFY25-23P | HiRel X-Band GaAs Low Noise / General Purpose MESFET |
| CFY25-P | HiRel X-Band GaAs Low Noise / General Purpose MESFET |
| CFY25 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CFY25-20 (S) | 功能描述:射频GaAs晶体管 HiRel X-Band GaAs Gen Purpose MESFET RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| CFY25-20P | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:HiRel X-Band GaAs Low Noise / General Purpose MESFET |
| CFY25-23 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:HiRel X-Band GaAs Low Noise / General Purpose MESFET |
| CFY25-23 (P) | 功能描述:射频GaAs晶体管 HiRel X-Band GaAs Gen Purpose MESFET RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| CFY25-23P | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:HiRel X-Band GaAs Low Noise / General Purpose MESFET |
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