型号: | CFY25-P |
厂商: | INFINEON TECHNOLOGIES AG |
英文描述: | HiRel X-Band GaAs Low Noise / General Purpose MESFET |
中文描述: | 伊雷尔X波段功率低噪声/通用场效应晶体管 |
文件页数: | 2/8页 |
文件大小: | 2088K |
代理商: | CFY25-P |
相关PDF资料 |
PDF描述 |
---|---|
CFY25 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
CFY25-17 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
CFY25-20 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
CFY25-23 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
CFY67 | HiRel K-Band GaAs Super Low Noise HEMT |
相关代理商/技术参数 |
参数描述 |
---|---|
CFY27 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:HiRel Ku-Band GaAs General Purpose MESFET |
CFY27-38 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:HiRel Ku-Band GaAs General Purpose MESFET |
CFY27-P | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:HiRel Ku-Band GaAs General Purpose MESFET |
CFY30 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz) |
CFY35 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |