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参数资料
| 型号： | CFY25-P |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | HiRel X-Band GaAs Low Noise / General Purpose MESFET |
| 中文描述： | 伊雷尔X波段功率低噪声/通用场效应晶体管 |
| 文件页数： | 7/8页 |
| 文件大小： | 2088K |
| 代理商： | CFY25-P |
CFY25
Semiconductor Group
7 of 8
Draft D, Sep. 0000
Order Instructions:
Full type variant including quality level must be specified by the orderer. For
HiRel
Discrete
and Microwave Semiconductors the ordering code specifies device family and quality level
only.
Ordering Form:
Ordering Code: Q..........
CFY25- (nnl) (ql)
(nnl):
Noise/Gain/Power Level
Quality Level
(ql):
Ordering Example:
Ordering Code: Q62703F119
CFY25-20P
For CFY25, Noise/Gain/Power Level 20P:
NF < 2.1dB, G
a
> 8.5 dB, P
1dB
> 14 dBm @ 12 GHz
in ESA Space Quality Level
Further Informations:
See our WWW-Pages:
- Discrete and RF-Semiconductors (Small Signal Semiconductors)
www.siemens.de/semiconductor/products/35/35.htm
-
HiRel
Discrete and Microwave Semiconductors
www.siemens.de/semiconductor/products/35/353.htm
Please contact also our marketing division :
Tel.:
Fax.:
e-mail:
Address:
++89 6362 4480
++89 6362 5568
martin.wimmers@siemens-scg.com
Siemens Semiconductors,
High Frequency Products Marketing,
P.O.Box 801709,
D-81617 Munich
相关PDF资料 |
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| CFY25 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
| CFY25-17 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
| CFY25-20 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
| CFY25-23 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
| CFY67 | HiRel K-Band GaAs Super Low Noise HEMT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CFY27 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:HiRel Ku-Band GaAs General Purpose MESFET |
| CFY27-38 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:HiRel Ku-Band GaAs General Purpose MESFET |
| CFY27-P | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:HiRel Ku-Band GaAs General Purpose MESFET |
| CFY30 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz) |
| CFY35 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
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