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参数资料
| 型号： | CFY67-08 |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | HiRel K-Band GaAs Super Low Noise HEMT |
| 中文描述： | 伊雷尔K波段低噪声砷化镓超迁移率晶体管 |
| 文件页数： | 4/9页 |
| 文件大小： | 747K |
| 代理商： | CFY67-08 |
CFY67
S emiconductor Group
4 of 10
Draft D, S eptember 99
Electrical Characteristics
(continued)
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Noise figure
1)
V
DS
= 2 V, I
D
= 15 mA, f = 12 GHz
NF
dB
CFY67-06
-
0.5
0.6
CFY67-08, -08P
-
0.7
0.8
CFY67-10, 10P
-
0.9
1.0
Associated gain.
1)
V
DS
= 2 V, I
D
= 15 mA, f = 12 GHz
G
a
dB
CFY67-06
11.5
12.5
-
CFY67-08, -08P
11.0
11.5
-
CFY67-10, 10P
10.5
11.0
-
Output power at 1 dB gain compression
2)
V
DS
= 2 V, I
D
= 20 mA, f = 12 GHz
P
1dB
dBm
CFY67-06, -08, -10
-
11.0
-
CFY67-08P, -10P
10.0
11.0
-
Notes.:
1) Noise figure / sssociated gain characteristics given for minimum noise figure matching
conditions (fixed generic matching, no fine-tuning).
2) Output power characteristics given for optimum output power matching conditions (fixed
generic matching, no fine-tuning).
相关PDF资料 |
PDF描述 |
|---|---|
| CFY67-08P | HiRel K-Band GaAs Super Low Noise HEMT |
| CFY67-10 | HiRel K-Band GaAs Super Low Noise HEMT |
| CFY67-10P | HiRel K-Band GaAs Super Low Noise HEMT |
| CGA633450A | LIGHTWEIGHT PRISMATIC MODEL |
| cgb 190 | GaAs HBT(GaAs 场效应管) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CFY67-08 (P) | 功能描述:射频GaAs晶体管 RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| CFY67-08P | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:HiRel K-Band GaAs Super Low Noise HEMT |
| CFY67-08PE6327 | 制造商:Infineon Technologies AG 功能描述: |
| CFY6708PZZZA1 | 制造商:Infineon Technologies AG 功能描述:CFY6708PZZZA1 - Bulk |
| CFY67-10 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:HiRel K-Band GaAs Super Low Noise HEMT |
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