参数资料
型号: CFY67
厂商: INFINEON TECHNOLOGIES AG
英文描述: HiRel K-Band GaAs Super Low Noise HEMT
中文描述: 伊雷尔K波段低噪声砷化镓超迁移率晶体管
文件页数: 9/9页
文件大小: 747K
代理商: CFY67
CFY67
S emiconductor Group
9 of 10
Draft D, S eptember 99
Micro-X Package
Published by Infineon Technologies Semiconductors,
High Frequency Products Marketing, P.O.Box 801709,
D-81617 Munich.
Infineon Technologies AG 1998. All Rights Reserved.
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se,
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and
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The information describes the type of component and shall
not be considered as assured characteristics.
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相关PDF资料
PDF描述
CFY67-06 HiRel K-Band GaAs Super Low Noise HEMT
CFY67-08 HiRel K-Band GaAs Super Low Noise HEMT
CFY67-08P HiRel K-Band GaAs Super Low Noise HEMT
CFY67-10 HiRel K-Band GaAs Super Low Noise HEMT
CFY67-10P HiRel K-Band GaAs Super Low Noise HEMT
相关代理商/技术参数
参数描述
CFY67_11 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:HiRel K-Band GaAs Super Low Noise HEMT
CFY67-06 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:HiRel K-Band GaAs Super Low Noise HEMT
CFY67-08 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:HiRel K-Band GaAs Super Low Noise HEMT
CFY67-08 (P) 功能描述:射频GaAs晶体管 RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS(最大值/最小值):4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
CFY67-08P 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:HiRel K-Band GaAs Super Low Noise HEMT