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参数资料
| 型号： | cgb 190 |
| 厂商： | SIEMENS AG |
| 英文描述： | GaAs HBT(GaAs 场效应管) |
| 中文描述： | 砷化镓异质结双极晶体管（砷化镓场效应管） |
| 文件页数： | 4/5页 |
| 文件大小： | 40K |
| 代理商： | CGB 190 |
CGB 190
Data Book
4
03.00
Digital Mode PCS CDMA
CDMA output
power
P
out
–
28.5
–
dBm
–
Gain
G
–
28
–
dB
P
out
= 29 dBm
Offset =
±
1.25 MHz
Offset =
±
2.25 MHz
P
out
= 28.5 dBm
P
out
= 28.5 dBm
Adj. channel power
rejection
ACPR
ALPR
–
–
–
–
– 45
– 57
dBc
Efficiency
PAE
–
35
–
%
Digital Mode WCDMA
CDMA output
power
P
out
–
27
–
dBm
–
Gain
G
–
28
–
dB
P
out
= 27 dBm
P
out
= 27 dBm
Adj. channel power
rejection
ACPR
ALPR
–
–
– 38
– 45
dBc
Efficiency
PAE
–
33
–
%
P
out
= 27 dBm
Power Supply
Power supply
voltage
V
CC
3.2
3.7
4.2
V
–
Reference voltage
V
ref
I
q
–
3
–
V
–
Idle current
–
120
60
–
mA
Vmode = high
Vmode = low
Turn On/Off time
t
on
/
t
off
I
pd
T
case
–
–
5
μ
s
μ
A
–
Power down current
–
–
10
–
Case operating
temperature
– 30
–
+ 95
C
–
Electrical Characteristics
(cont’d)
(
T
A
= 25
°
C,
Z
S
=
Z
L
= 50
,
V
c
= 3.7 V,
V
ref
= 2.8 V,
V
mode
= 2.5 V,
unless otherwise specified)
Characteristics
Symbol
Limit Values
Unit
Test Conditions
min.
typ.
max.
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