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参数资料
| 型号： | cgy 50 |
| 厂商： | SIEMENS AG |
| 英文描述： | GaAs MMIC(砷化镓微波放大器) |
| 中文描述： | 砷化镓微波单片集成电路（砷化镓微波放大器） |
| 文件页数： | 1/6页 |
| 文件大小： | 46K |
| 代理商： | CGY 50 |
Data Book
1
03.00
GaAs MMIC
Data Sheet
CGY 50
Single-stage monolithic microwave IC
(MMIC-amplifier)
Cascadable 50
gain block
Application range: 100 MHz to 3 GHz
IP3
30 dBm typ. @ 1.8 GHz
Gain 8.5 dB typ. @ 1.8 GHz
Low noise figure: 3.0 dB typ @ 1.8 GHz
Gain control dynamic range 20 dB
ESD:
E
lectro
s
tatic
d
ischarge sensitive device,
observe handling precautions!
Type
Marking
Ordering Code
(tape and reel)
Package
1)
1)
Dimensions see
Page 6
.
CGY 50
G2
Q68000-A8370
P-SOT143-4-1
Maximum Ratings
Symbol
Value
Unit
Drain-voltage
V
D
V
DP
V
G
V
DG
P
IN
T
Ch
T
stg
P
tot
5.5
V
Peak drain-voltage
7.5
V
Current control gate voltage
– 3 … 0
V
Drain-gate voltage
7.5
V
Input power
1)
1)
2)
T
S
is measured on the source 1 lead at the soldering point to the PCB.
See application circuit.
16
dBm
Channel temperature
150
°
C
°
C
Storage temperature range
– 55 … + 150
Total power dissipation (
T
S
≤
82
°
C)
2)
400
mW
Thermal Resistance
Symbol
Value
Unit
Channel-soldering point
1)
1)
T
S
is measured on the source 1 lead at the soldering point to the PCB.
R
thChS
< 170
K/W
SOT-143
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