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参数资料
| 型号： | cgy 50 |
| 厂商： | SIEMENS AG |
| 英文描述： | GaAs MMIC(砷化镓微波放大器) |
| 中文描述： | 砷化镓微波单片集成电路（砷化镓微波放大器） |
| 文件页数： | 2/6页 |
| 文件大小： | 46K |
| 代理商： | CGY 50 |
CGY 50
Data Book
2
03.00
Note
Exceeding any of the max. ratings may cause permanent damage to the device.
Appropriate handling is required to protect the electrostatic sensitive MMIC against
degradation due to excess current spikes. Proper ground connection of leads 1 and 3
(with minimum inductance) is required to achieve the guaranteed RF performance,
stable operating conditions and adequate tuning.
Figure 1
Circuit Diagram (Pin Configuration)
Electrical Characteristics
T
A
= 25
°
C,
V
G
= 0 V,
V
D
= 4.5 V,
R
S
=
R
L
= 50
,
unless otherwise specified.
For application circuit see
Page 3
.
Characteristics
Symbol
Limit Values
Unit
Test Conditions
min.
typ.
max.
Drain current
I
D
G
–
60
75
mA
–
Power gain
f
= 200 MHz
f
= 1800 MHz
–
7.5
10.0
8.5
–
–
dB
–
Gain flatness
f
= 200 to 1000 MHz
f
= 800 to 1800 MHz
G
–
–
0.4
1.1
–
2
dB
–
Noise figure
F
–
3.0
4.0
dB
f
= 200 to 1800 MHz
Input return loss
RL
IN
9.5
12
–
dB
f
= 200 to 1800 MHz
EHT08787
OUT/D
2
1, 3
S
IN/G
4
4 k
typ.
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