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参数资料
| 型号： | cgy 50 |
| 厂商： | SIEMENS AG |
| 英文描述： | GaAs MMIC(砷化镓微波放大器) |
| 中文描述： | 砷化镓微波单片集成电路（砷化镓微波放大器） |
| 文件页数： | 3/6页 |
| 文件大小： | 46K |
| 代理商： | CGY 50 |
CGY 50
Data Book
3
03.00
Figure 2
Application Circuit
(
f
= 800 … 1800 MHz)
Output return loss
RL
OUT
IP3
9.5
12
–
dB
f
= 200 to 1800 MHz
f
1
= 806 MHz,
f
2
= 810 MHz,
P
0
= 10 dBm (both
carriers)
3
rd
intercept point
Two tone
intermodulation test
29
31
–
dBm
1 dB gain
compression
P
1 dB
–
16
–
dBm
f
= 200 to 1800 MHz
Gain control
dynamic range
G
–
20
–
dB
f
= 200 to 1800 MHz
Electrical Characteristics
(cont’d)
T
A
= 25
°
C,
V
G
= 0 V,
V
D
= 4.5 V,
R
S
=
R
L
= 50
,
unless otherwise specified.
For application circuit see
Page 3
.
Characteristics
Symbol
Limit Values
Unit
Test Conditions
min.
typ.
max.
EHT08788
Input
50
G
V
Output
50
CGY 50
3
2
1
4
50
Microstripline
1
C
C
3
L
1
L
2
C
4
V
D
C
2
D1
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