参数资料
型号: CGD1044HI
厂商: NXP SEMICONDUCTORS
元件分类: 倍频器
英文描述: 1 GHz, 25 dB gain GaAs high output power doubler
中文描述: 40 MHz - 1003 MHz RF/MICROWAVE FREQUENCY DOUBLER
封装: ROHS COMPLIANT, SOT-115J, 7 PIN
文件页数: 2/7页
文件大小: 51K
代理商: CGD1044HI
CGD1044HI_1
NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 21 September 2009
2 of 7
NXP Semiconductors
CGD1044HI
1 GHz, 25 dB gain GaAs high output power doubler
2.
Pinning information
3.
Ordering information
4.
Limiting values
[1]
The ESD pulse of 2000 V corresponds to a class 2 sensitivity level.
Table 2.
Pinning
Pin
Description
Simplied outline
Graphic symbol
1
input
2, 3
common
5+VB
7, 8
common
9
output
9
13 57
23 78
5
9
1
sym095
Table 3.
Ordering information
Type number
Package
Name
Description
Version
CGD1044HI
-
rectangular single-ended package; aluminium ange;
2 vertical mounting holes; 2
× 6-32 UNC and 2 extra
horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min Max
Unit
VB
supply voltage
-
30
V
Vi(RF)
RF input voltage
single tone
-
75
dBmV
VESD
electrostatic discharge voltage
Human Body Model (HBM);
According JEDEC standard
22-A114E
2000 V
Biased; According
IEC61000-4-2
-
1500 V
Tstg
storage temperature
40 +100 °C
Tmb
mounting base temperature
20 +100 °C
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