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参数资料
| 型号： | CGD985HCI |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率放大器 |
| 英文描述： | 1 GHz, 25 dB gain GaAs high output power doubler |
| 封装： | CGD985HCI<SOT115J|<<<1<Always Pb-free,;CGD985HCI/01<SOT115J|<<<1<Always Pb-free,; |
| 文件页数： | 1/9页 |
| 文件大小： | 94K |
| 代理商： | CGD985HCI |
1.
Product profile
1.1 General description
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V
Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
1.2 Features and benefits
Excellent linearity
Optimized for flat PAL D and flat NTSC loading
Superior levels of ESD protection
Extremely low noise
Excellent return loss properties
Gain compensation over temperature
Rugged construction
Unconditionally stable
Thermally optimized design
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
Integrated ring wave surge protection
1.3 Applications
CATV systems operating in the 40 MHz to 862 MHz / 1003 MHz frequency range
using PAL D or NTSC channel conditions.
1.4 Quick reference data
[1]
98 PAL D channels with 8 MHz bandwidth per channel; [f = 47 MHz to 862 MHz]; flat Vo till 862 MHz.
[2]
Direct Current (DC).
CGD985HCI
1 GHz, 25 dB gain GaAs high output power doubler
Rev. 1 — 5 April 2011
Product data sheet
Table 1.
Quick reference data
Bandwidth 40 MHz to 1003 MHz; VB = 24 V (DC); ZS = ZL = 75 Ω; Tmb =35 °C; unless otherwise
specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
Gp
power gain
f = 50 MHz
-
23.2 -
dB
f = 1003 MHz
23.5 24.4 25.5 dB
CTB
composite triple beat
Vo = 48 dBmV at 862 MHz
[1] -
66 62 dBc
CSO
composite second-order
distortion
Vo = 48 dBmV at 862 MHz
[1] -
69 62 dBc
Itot
total current
[2] -
440
460
mA
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