参数资料
型号: CGD985HCI
厂商: NXP Semiconductors N.V.
元件分类: 功率放大器
英文描述: 1 GHz, 25 dB gain GaAs high output power doubler
封装: CGD985HCI<SOT115J|<<<1<Always Pb-free,;CGD985HCI/01<SOT115J|<<<1<Always Pb-free,;
文件页数: 4/9页
文件大小: 94K
代理商: CGD985HCI
CGD985HCI
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 5 April 2011
4 of 9
NXP Semiconductors
CGD985HCI
1 GHz, 25 dB gain GaAs high output power doubler
[1]
98 PAL D channels with 8 MHz bandwidth per channel; [f = 47 MHz to 862 MHz]; flat Vo till 862 MHz.
[2]
112 NTSC channels; [f = 45 MHz to 750 MHz]; flat Vo till 750 MHz.
[3]
79 NTSC channels [f = 54 MHz to 550 MHz] + 75 digital channels [f = 550 MHz to 1003 MHz] (
6 dB offset); tilt extrapolated to 13.5 dB
at 1003 MHz.
Table 6.
Distortion characteristics
Bandwidth 40 MHz to 1003 MHz; VB = 24 V (DC); ZS = ZL = 75 Ω; Tmb =35 °C; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
98 PAL D channels
CTB
composite triple beat
Vo = 48 dBmV at 862 MHz
66
62
dBc
Vo = 50 dBmV at 862 MHz
62
-
dBc
CSO
composite second-order distortion
Vo = 48 dBmV at 862 MHz
69
62
dBc
Vo = 50 dBmV at 862 MHz
65
-
dBc
Xmod
cross modulation
Vo = 48 dBmV at 862 MHz
68
-
dB
Vo = 50 dBmV at 862 MHz
60
-
dB
112 NTSC channels
CTB
composite triple beat
Vo = 48 dBmV at 750 MHz
63
-
dBc
CSO
composite second-order distortion
Vo = 48 dBmV at 750 MHz
66
-
dBc
Xmod
cross modulation
Vo = 48 dBmV at 750 MHz
66
-
dB
79 NTSC channels + 75 digital channels
CTB
composite triple beat
Vo = 56.4 dBmV at 1003 MHz
75
-
dBc
CSO
composite second-order distortion
Vo = 56.4 dBmV at 1003 MHz
77
-
dBc
Xmod
cross modulation
Vo = 56.4 dBmV at 1003 MHz
68
-
dB
CCN
carrier-to-composite noise
Vo = 56.4 dBmV at 1003 MHz
[3] -57
-
dBc
相关PDF资料
PDF描述
CGD987HCI Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
CGY1032 1 GHz, 32 dB gain GaAs push-pull amplifier
CGY1041 1 GHz, 21 dB gain GaAs push-pull amplifier
CGY1047 1 GHz, 27 dB gain GaAs push-pull amplifier
CGY888C 34 dB, 870 MHz GaAs push-pull forward amplifier
相关代理商/技术参数
参数描述
CGD985HCI,112 功能描述:射频放大器 1GHz 25dB gain GaAs Hi output pwr doublr RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel
CGD985HCI/01,112 制造商:NXP Semiconductors 功能描述:1 GHZ, 25 DB GAIN GAAS HIGH OUTPUT POWER DOUBLER - Rail/Tube
CGD985LCU 功能描述:IC AMP CATV PWR DOUBLER 8SIL 制造商:nxp semiconductors 系列:- 包装:管件 零件状态:过期 应用:CATV 输出类型:- 电路数:1 -3db 带宽:- 压摆率:- 电流 - 电源:365mA 电流 - 输出/通道:- 电压 - 电源,单/双(±):24V 安装类型:表面贴装 封装/外壳:SOT-115AE 供应商器件封装:8-SIL 标准包装:25
CGD987HCI,112 功能描述:射频放大器 1GHz 27 dB gain GaAs hi output pwr dblr RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel
CGDCABLE4M 制造商:Carlo Gavazzi 功能描述: