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| 型号： | CGH40006S-KIT |
| 厂商： | Cree Inc |
| 文件页数： | 8/15页 |
| 文件大小： | 1231K |
| 描述： | FET RF HEMT 28V 100MA 440203 |
| 标准包装： | 1 |
| 系列： | GaN |
| 类型： | 放大器 |
| 频率： | 0Hz ~ 6GHz |
| 适用于相关产品： | CGH40006S |
| 已供物品： | 板 |
2
CGH40006S Rev 1.6
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright ? 2010-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Absolute Maximum Ratings (not simultaneous) at 25?C Case Temperature
Parameter
Symbol
Rating
Units
Conditions
Drain-Source Voltage
VDSS
84
Volts
25?C
Gate-to-Source Voltage
VGS
-10, +2
Volts
25?C
Storage Temperature
TSTG
-65, +150
?C
Operating Junction Temperature
TJ
175
?C
Maximum Forward Gate Current
IGMAX
2.1
mA
25?C
Maximum Drain Current1
IDMAX
0.75
A
25?C
Soldering Temperature2
TS
260
?C
Thermal Resistance, Junction to Case3,4
RθJC
10.1
?C/W
85?C
Case Operating Temperature3,4
TC
-40, +150
?C
30 seconds
Note:
1
Current limit for long term, reliable operation
2
Refer to the Application Note on soldering at
www.cree.com/products/wireless_appnotes.asp
3
Measured for the CGH40006S at P
DISS
= 8 W.
4
T
C
= Case temperature for the device. It refers to the temperature at the ground tab underneath the package. The PCB will add
additional thermal resistance. The RTH for Cree’s demonstration amplifer, CGH40006S-TB, with 13 (?20 mil) via holes designed on a
20 mil thick Rogers 5880 PCB, is 5.1°C. The total Rth from the heat sink to the junction is 10.1°C +5.1°C = 15.2 °C/W.
Electrical Characteristics (TC
= 25?C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics1
Gate Threshold Voltage
VGS(th)
-3.8
-3.0
-2.3
VDC
VDS
= 10 V, I
D
= 2.1 mA
Gate Quiescent Voltage
VGS(Q)
–
-2.7
–
VDC
VDS
= 28 V, I
D
= 100 mA
Saturated Drain Current
IDS
1.7
2.1
–
A
VDS
= 6.0 V, V
GS
= 2.0 V
Drain-Source Breakdown Voltage
VBR
120
–
–
VDC
VGS
= -8 V, I
D
= 2.1 mA
RF Characteristics2
(T
C
= 25
?C, F0
= 5.8 GHz unless otherwise noted)
Small Signal Gain
GSS
10
11.8
–
dB
VDD
= 28 V, I
DQ
= 100 mA
Power Output at PIN
= 30 dBm
POUT
5
6.9
–
W
VDD
= 28 V, I
DQ
= 100 mA
Drain Effciency3
η
40
53
–
%
VDD
= 28 V, I
DQ
= 100 mA,
PIN
= 30 dBm
Output Mismatch Stress
VSWR
–
–
10 : 1
Y
No damage at all phase angles,
VDD
= 28 V, I
DQ
= 100 mA,
PIN
= 32 dBm
Dynamic Characteristics
Input Capacitance
CGS
–
2.7
–
pF
VDS
= 28 V, V
gs
= -8 V, f = 1 MHz
Output Capacitance
CDS
–
0.8
–
pF
VDS
= 28 V, V
gs
= -8 V, f = 1 MHz
Feedback Capacitance
CGD
–
0.1
–
pF
VDS
= 28 V, V
gs
= -8 V, f = 1 MHz
Notes:
1
Measured on wafer prior to packaging.
2 Measured in Cree’s narrow band production test fxture AD-000291. This fxture is designed for high volume test at 5.8 GHz and may
not show the full capability of the device due to source inductance and thermal performance. The demonstration amplifer, CGH40006S-
TB, is a better indicator of the true RF performance of the device.
3
Drain Effciency = P
OUT
/ P
DC
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