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参数资料
| 型号： | CGH55015F2 |
| 厂商： | Cree Inc |
| 文件页数： | 6/10页 |
| 文件大小： | 3000K |
| 描述： | FET RF HEMT 5.65GHZ 84V 440166 |
| 标准包装： | 58 |
| 系列： | GaN |
| 晶体管类型： | HEMT |
| 频率： | 5.65GHz |
| 增益： | 12dB |
| 电压 - 测试： | 28V |
| 电流 - 测试： | 200mA |
| 功率 - 输出： | 12.5W |
| 电压 - 额定： | 84V |
| 封装/外壳： | 440166 |
| 供应商设备封装： | 440166 |
| 包装： | 管件 |
5
CGH55015F2_P2 Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright ? 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Source and Load Impedances
Frequency (MHz)
Z Source
Z Load
5500
8.7 – j30.2
21.6 – j4.7
5650
10.2 – j26.9
24.2 - j5.5
5800
12.3 – j24.3
26.5 - j7.5
Note 1. VDD
= 28V, I
DQ
= 200 mA in the 440166 package.
Note 2. Impedances are extracted from the CGH55015-TB demonstration
amplifer and are not source and load pull data derived from the transistor.
CGH55015F2 and CGH55015P2 Power Dissipation De-rating Curve
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
D
Z Source
Z Load
G
S
10
12
14
16
P
o
w
e
r
D
i
s
s
i
p
a
t
i
o
n
(
W
)
CGH40010F CW Power Dissipation De-rating Curve
0
2
4
6
8
0 25 50 75 100 125 150 175 200 225 250
P
o
w
e
r
D
i
s
s
i
p
a
t
i
o
n
(
W
)
Maximum Case Temperature (°C)
Note 1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CGH55015F-TB | 功能描述:BOARD DEMO AMP CIRCUIT CGH55015F RoHS:是 类别:RF/IF 和 RFID >> RF 评估和开发套件，板 系列:- 标准包装:1 系列:- 类型:GPS 接收器 频率:1575MHz 适用于相关产品:- 已供物品:模块 其它名称:SER3796 |
| CGH5501604DLF | 制造商:TT Electronics / IRC 功能描述:CGH5501604DLF |
| CGH5501604FLF | 制造商:TT Electronics / IRC 功能描述:CGH5501604FLF |
| CGH5501605DLF | 制造商:TT Electronics / IRC 功能描述:CGH5501605DLF |
| CGH5501605FLF | 制造商:TT Electronics / IRC 功能描述:CGH5501605FLF |
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