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参数资料
| 型号： | CGH55030F2 |
| 厂商： | Cree Inc |
| 文件页数： | 1/10页 |
| 文件大小： | 2557K |
| 描述： | FET RF HEMT 6GHZ 28V 440166 |
| 特色产品： | CGH55030F2 High Electron Mobility Transistor |
| 标准包装： | 58 |
| 系列： | GaN |
| 晶体管类型： | HEMT |
| 频率： | 4.5GHz ~ 6GHz |
| 增益： | 11dB |
| 电压 - 测试： | 28V |
| 电流 - 测试： | 250mA |
| 功率 - 输出： | 30W |
| 电压 - 额定： | 84V |
| 封装/外壳： | 440166 |
| 供应商设备封装： | 440166 |
| 包装： | 管件 |
1
Subject to change without notice.
www.cree.com/wireless
CGH55030F2 / CGH55030P2
25 W, C-band, Unmatched, GaN HEMT
Cree’s CGH55030F2/CGH55030P2 is a gallium nitride (GaN) high electron
mobility transistor (HEMT) designed specifcally for high effciency, high
gain and wide bandwidth capabilities, which makes the CGH55030F2/
CGH55030P2 ideal for C-band pulsed or CW saturated amplifers. The
transistor is available in both screw-down, fange and solder-down,
pill packages. Based on appropriate external match adjustment, the
CGH55030F2/CGH55030P2 is suitable for applications up to 6 GHz.
Package Type: 440196 & 440166
PN: CGH55030P2 & CGH55030F2
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FEATURES
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4.5 to 6.0 GHz Operation
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12 dB Small Signal Gain at 5.65 GHz
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30 W typical PSAT
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60 % Effciency at PSAT
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28 V Operation
APPLICATIONS
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2-Way Private Radio
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Broadband Amplifers
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Cellular Infrastructure
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Test Instrumentation
?
Class A, AB Amplifers for Drivers and
Gain Blocks
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CGH55030F-TB | 功能描述:RF EVAL HEMT AMPLIFIER RoHS:是 类别:RF/IF 和 RFID >> RF 评估和开发套件，板 系列:- 标准包装:1 系列:- 类型:GPS 接收器 频率:1575MHz 适用于相关产品:- 已供物品:模块 其它名称:SER3796 |
| CGH55030P2 | 制造商:CREE 制造商全称:Cree, Inc 功能描述:25 W, C-band, Unmatched, GaN HEMT |
| CGH5503163DLF | 制造商:TT Electronics / IRC 功能描述:CGH5503163DLF |
| CGH5503163FLF | 制造商:TT Electronics / IRC 功能描述:CGH5503163FLF |
| CGH5503164DLF | 制造商:TT Electronics / IRC 功能描述:CGH5503164DLF |
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