参数资料
型号: CGH55030F2
厂商: Cree Inc
文件页数: 10/10页
文件大小: 2557K
描述: FET RF HEMT 6GHZ 28V 440166
特色产品: CGH55030F2 High Electron Mobility Transistor
标准包装: 58
系列: GaN
晶体管类型: HEMT
频率: 4.5GHz ~ 6GHz
增益: 11dB
电压 - 测试: 28V
电流 - 测试: 250mA
功率 - 输出: 30W
电压 - 额定: 84V
封装/外壳: 440166
供应商设备封装: 440166
包装: 管件
9
CGH55030F2_P2 Rev 3.2
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright ? 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Product Dimensions CGH55030F (Package Type — 440166)
Product Dimensions CGH55030P (Package Type — 440196)
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