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参数资料
| 型号： | CGH55030F2 |
| 厂商： | Cree Inc |
| 文件页数： | 7/10页 |
| 文件大小： | 2557K |
| 描述： | FET RF HEMT 6GHZ 28V 440166 |
| 特色产品： | CGH55030F2 High Electron Mobility Transistor |
| 标准包装： | 58 |
| 系列： | GaN |
| 晶体管类型： | HEMT |
| 频率： | 4.5GHz ~ 6GHz |
| 增益： | 11dB |
| 电压 - 测试： | 28V |
| 电流 - 测试： | 250mA |
| 功率 - 输出： | 30W |
| 电压 - 额定： | 84V |
| 封装/外壳： | 440166 |
| 供应商设备封装： | 440166 |
| 包装： | 管件 |
6
CGH55030F2_P2 Rev 3.2
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright ? 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
CGH55030-TB Demonstration Amplifer Circuit
Bill of Materials
Designator
Description
Qty
R1
RES, 1/16W, 0603, 1%, 562 OHMS
1
R2
RES, 1/16W, 0603, 1%, 22.6 OHMS
1
C2
CAP, 0.3pF, +/-0.05pF, 0402, ATC600L
1
C16
CAP, 33 UF, 20%, G CASE
1
C15
CAP, 1.0UF, 100V, 10%, X7R, 1210
1
C8
CAP 10UF 16V TANTALUM
1
C9
CAP, 0.4pF, +/-0.05pF, 0603, ATC600S
1
C1
CAP, 1.2pF, +/-0.1pF, 0603, ATC600S
1
C6,C13
CAP,200 PF,0603 PKG, 100 V
2
C4,C11
CAP, 10.0pF,+/-5%, 0603, ATC600S
2
C5,C12
CAP, 39pF, +/-5%, 0603, ATC600S
2
C7,C14
CAP, 330000PF, 0805, 100V, TEMP STABILIZ
2
J3,J4
CONN, SMA, PANEL MOUNT JACK, FLANGE
2
J1
HEADER RT>PLZ .1CEN LK 5POS
1
-
PCB, RO4350B, Er = 3.48, h = 20 mil
1
-
CGH55030
1
CGH55030-TB Demonstration Amplifer Circuit
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CGH55030F-TB | 功能描述:RF EVAL HEMT AMPLIFIER RoHS:是 类别:RF/IF 和 RFID >> RF 评估和开发套件，板 系列:- 标准包装:1 系列:- 类型:GPS 接收器 频率:1575MHz 适用于相关产品:- 已供物品:模块 其它名称:SER3796 |
| CGH55030P2 | 制造商:CREE 制造商全称:Cree, Inc 功能描述:25 W, C-band, Unmatched, GaN HEMT |
| CGH5503163DLF | 制造商:TT Electronics / IRC 功能描述:CGH5503163DLF |
| CGH5503163FLF | 制造商:TT Electronics / IRC 功能描述:CGH5503163FLF |
| CGH5503164DLF | 制造商:TT Electronics / IRC 功能描述:CGH5503164DLF |
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