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| 型号： | CGY1041 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 放大器 |
| 英文描述： | 1 GHz, 21 dB gain GaAs push-pull amplifier |
| 中文描述： | 40 MHz - 1003 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封装： | ROHS COMPLIANT, SOT-115J, 7 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 91K |
| 代理商： | CGY1041 |
1.
Product profile
1.1 General description
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V
Direct Current (DC), employing Heterojunction Field Effect Transistor (HFET) GaAs dies.
1.2 Features and benefits
Excellent linearity, stability and reliability
Extremely low noise
Excellent return loss properties
Rugged construction
Unconditionally stable
Thermally optimized design
Superior levels of ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
Integrated ring wave surge protection
Power gain is specified for both 870 MHz and 1003 MHz bandwidth
1.3 Applications
CATV systems operating in the 40 MHz to 1003 MHz frequency range
1.4 Quick reference data
[1]
79 NTSC channels [f = 55.25 MHz to 547.25 MHz] + 75 digital channels [f = 547.25 MHz to 1003 MHz]
(
6 dB offset); flat output level.
[2]
Direct Current (DC).
CGY1041
1 GHz, 21 dB gain GaAs push-pull amplifier
Rev. 1 — 10 February 2011
Product data sheet
Table 1.
Quick reference data
Bandwidth 40 MHz to 1003 MHz; VB = 24 V (DC); ZS = ZL = 75 Ω; Tmb =35 °C; unless otherwise
specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Gp
power gain
f = 45 MHz
19.0
20.0
21.0
dB
f = 870 MHz
20.4
21.4
22.4
dB
f = 1003 MHz
21.0
21.75
22.5
dB
CTB
composite triple beat
Vo = 44 dBmV
[1] -
62
-
dBc
CCN
carrier-to-composite noise
Vo = 44 dBmV
[1] -63
-
dBc
Itot
total current
[2] -
265
280
mA
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