参数资料
型号: CGY31
厂商: SIEMENS A G
元件分类: 衰减器
英文描述: GaAs MMIC (Two-stage monolithic microwave IC MMIC amplifier All-gold metallization Chip fully passivated)
中文描述: 800 MHz - 1800 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封装: HERMETICALLY SEALED, TO-12, 4
文件页数: 2/9页
文件大小: 139K
代理商: CGY31
Semiconductor Group
2
CGY 31
Maximum Ratings
Parameter
Supply voltage,
T
C
80 C
Total power dissipation,
T
C
50 C
Symbol
Values
6
2
Unit
V
W
V
S
Channel temperature
Storage temperature range
T
ch
150
– 55 … + 150
C
P
tot
T
stg
Thermal Resistance
Channel - case
R
thchC
50
K/W
Note:
Exceeding any of the maximum ratings may cause permanent damage to the device.
Appropriate handling procedures are required to protect the electrostatic sensitive IC
against degradation due to excess voltage or excess current spikes. Excellent ground
connection of lead 4 and the package (e. g. soldered on microstripline laminate) is
required to achieve guaranteed RF performance and stable operation conditions and
provides adequate heat sink. Low parasitic capacitance of the bias network to port 2
gives optimum gain and flatness. Input and output connections must be DC isolated by
coupling capacitors.
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CGY353 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:GaAs MMIC
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