参数资料
型号: CGY31
厂商: SIEMENS A G
元件分类: 衰减器
英文描述: GaAs MMIC (Two-stage monolithic microwave IC MMIC amplifier All-gold metallization Chip fully passivated)
中文描述: 800 MHz - 1800 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封装: HERMETICALLY SEALED, TO-12, 4
文件页数: 4/9页
文件大小: 139K
代理商: CGY31
Semiconductor Group
4
CGY 31
Application Circuit
f
= 800 MHz to 1800 MHz
Legend of components
C
1
,
C
2
,
C
3
: 100 pF
: 1 nF
R
1
L
1
39
70 nH
Resistor, e.g.
l
= 4 mm;
1.8 mm with axial leads
Inductance, e.g. 8 turns, 0.25 mm enamelled copper wire
wound on
R
. The geometrical combination of
L
1
and
R
influences the frequency response.
Inductance, e.g. 5 turns, 0.25 enamelled copper wire
wound on M3-nylon rod.
Zener diode, 1.3 W (type BZW 22 C 6 V 2).
L
2
40 nH
Chip capacitors
D
6 V 2
Note:
For lower frequencies (
f
= 100 … 900 MHz) the performance of CGY 31 is comparable
to that of CGY 21, if an interstage circuit with
L
1
= 1
μ
H is connected.
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