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参数资料
| 型号： | CGY94 |
| 厂商： | SIEMENS A G |
| 元件分类： | 衰减器 |
| 英文描述： | GaAs MMIC (Power amplifier for GSM or AMPS application Fully integrated 2 stage amplifier Operating voltage range: 2.7 to 6 V) |
| 中文描述： | RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 文件页数： | 3/9页 |
| 文件大小： | 122K |
| 代理商： | CGY94 |
GaAs MMIC
CGY 94
_______________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 3/9
17.10.95
HL EH PD 21
Electrical characteristics
(TA = 25°C , f=0.9 GHz, ZS=ZL=50 Ohm, VD=3.6V, VG=-4V, VTR pin connected to
ground, unless otherwise specified; pulsed with a duty cycle of 10%, ton=0.33ms)
Characteristics
Supply current
VD=3.0V; Pin=10dBm
Negative supply current
(normal operation)
Shut-off current
VTR n.c.
Negative supply current
(shut off mode, VTR pin n.c.)
Gain
Pin=-5dBm
Power gain
VD=3.6V; Pin=10dBm
Output Power
VD=3.0V; Pin=10dBm
Output Power
VD=3.6V; Pin=10dBm
Output Power
VD=5V; Pin=10dBm
Overall Power added Efficiency
VD=3.0V; Pin=10dBm
Overall Power added Efficiency
VD=3.6V; Pin=10dBm
Overall Power added Efficiency
VD=5V; Pin=10dBm
Harmonics
(Pin=10dBm, CW)
2f
0
VD=3.6V; (Pout=33.1dBm)
3f
0
Input VSWR
VD=3.6V;
Symbol
IDD
min
-
typ
1.18
max
-
Unit
A
IG
-
2
-
mA
ID
-
400
-
μ
A
IG
-
10
-
μ
A
G
27.0
29.0
-
dB
G
22.8
23.6
-
dB
Po
31.5
32.3
-
dBm
Po
32.8
33.6
-
dBm
Po
34.5
35.5
-
dBm
η
43
48
-
%
η
42
47
-
%
η
41
46
-
%
-
-
-
-
-
-
-49
-45
1.5 : 1
-
-
dBc
dBc
-
2.0 : 1
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