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参数资料
| 型号： | CGY94 |
| 厂商： | SIEMENS A G |
| 元件分类： | 衰减器 |
| 英文描述： | GaAs MMIC (Power amplifier for GSM or AMPS application Fully integrated 2 stage amplifier Operating voltage range: 2.7 to 6 V) |
| 中文描述： | RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 文件页数： | 9/9页 |
| 文件大小： | 122K |
| 代理商： | CGY94 |
GaAs MMIC
CGY 94
_______________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 9/9
17.10.95
HL EH PD 21
APPLICATION - HINTS
1. CW - capability of the CGY94
Proving the possibility of CW - operation there must be known the total power dissipation of the
device. This value can be found as a function of the temperature in the datasheet (page 7). The
CGY94 has a maximum total power dissipation of Ptot = 5 W.
As an example we take the operating point with a drain voltage VD = 3 V and a typical drain current
of ID=1.0 A. So the maximum DC - power can be calculated to:
P
V
DC
D
I
W
D
=
=
3
This value is smaller than 5 W and CW - operation is possible.
By decoupling RF power out of the CGY94 the power dissipation of the device can be further
reduced. Assuming a power added efficiency (PAE) of 40 % the total power dissipation Ptot can be
calculated using the following formula:
P
P
PAE
tot
DC
(
)
1
W
3
W
=
=
=
(
.
)
.
1 0 40
18
2. Operation without using the internal current control
If you don' t want to use the internal current control, it is recommended to connect the negative
supply voltage at pin 1 (VTR) instead of pin 2 (VG). In that case VG is not connected.
3. Biasing and use considerations
Biasing should be timed in such a way, that the gate voltage (VG) is always applied before the drain
voltage (VD), and when returning to the standby mode, the drain voltage has to be removed before
the gate voltage.
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