参数资料
型号: CM100RX-12A
厂商: Powerex Inc
文件页数: 2/6页
文件大小: 0K
描述: IGBT MOD 7PAC 600V 100A NX SER
标准包装: 1
系列: IGBTMOD™
配置: 三相反相器,带制动器
电压 - 集电极发射极击穿(最大): 600V
Vge, Ic时的最大Vce(开): 2.1V @ 15V,100A
电流 - 集电极 (Ic)(最大): 100A
电流 - 集电极截止(最大): 1mA
Vce 时的输入电容 (Cies): 13.3nF @ 10V
功率 - 最大: 400W
输入: 标准
NTC 热敏电阻:
安装类型: 底座安装
封装/外壳: 模块
供应商设备封装: 模块
配用: BG2B-5015-ND - KIT DEV BOARD 2CN 5A FOR IGBT
BG2B-3015-ND - KIT DEV BOARD 2CN 3A FOR IGBT
BG2B-1515-ND - KIT DEV BOARD 1.5A FOR IGBT
BG2A-NF-ND - KIT DEV BOARD FOR IGBT
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM100RX-12A
Six IGBTMOD? + Brake NX-Series Module
100 Amperes/600 Volts
Absolute Maximum Ratings, T j = 25°C unless otherwise specified
Characteristics
Power Device Junction Temperature
Storage Temperature
Mounting Torque, M5 Mounting Screws
Mounting Torque, M5 Main Terminal Screws
Module Weight (Typical)
Baseplate Flatness, On Centerline X, Y (See Below)
Isolation Voltage, AC 1 minute, 60Hz Sinusoidal
Symbol
T j
T stg
V ISO
CM100RX-12A
-40 to 150
-40 to 125
31
31
330
±0 ~ +100
2500
Units
°C
°C
in-lb
in-lb
Grams
μm
Volts
Inverter Sector
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current (T C = 75°C) *1
Peak Collector Current (Pulse) *3
Emitter Current (T C = 25°C) *1
Peak Emitter Current *3
Maximum Collector Dissipation (T C = 25°C) *1*4
V CES
V GES
I C
I CM
I E *2
I EM *2
P C
600
±20
100
200
100
200
400
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
Brake Sector
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
V CES
V GES
600
±20
Volts
Volts
Collector Current (T C =
97°C) *1
I C
50
Amperes
Peak Collector Current (Pulse) *3
Maximum Collector Dissipation (T C = 25°C) *1*4
Repetitive Peak Reverse Voltage (Clamp Diode Part)
I CM
P C
V RRM *2
100
280
600
Amperes
Watts
Volts
I F
Forward Current (T C =
25°C) *1
*2
50
Amperes
Forward Current (Pulse) *3
I FM *2
100
Amperes
*1 Case temperature (T C ) and heatsink temperature (T f ) are defined on the surface of the baseplate and heatsink at just under the chip.
*2 I E , I EM , V EC , t rr and Q rr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
I F , I FM , I RRM , V FM and V RRM represent ratings and characteristics of the clamp diode.
*3 Pulse width and repetition rate should be such that device junction temperature (T j ) does not exceed T j(max) rating.
*4 Junction temperature (T j ) should not increase beyond T j(max) rating.
BASEPLATE FLATNESS
MEASUREMENT POINT
CHIP LOCATION (TOP VIEW)
Chip Location (Top View)
X
Y
0
IGBT
FWDi
NTC Thermistor
34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13
0
– : CONCAVE
24.8
29.4
32.2
36.8
35
36
U P
U P
U N
U N
V P
V P
V N
V N
W P
W P
W N
W N
Br
Th
Br
12
11
10
9
8
7
6
5
21.3
30.4
41.2
+ : CONVEX
1
2
3
4
HEATSINK SIDE
Dimensions in mm (Tolerance: ± 1mm)
2
Rev. 3/09
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