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| 型号： | CM1409-08DE |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/8页 |
| 文件大小： | 0K |
| 描述： | ARRAY 8CH LCD/CAM EMI FLTR 16DFN |
| 产品变化通告： | Product Obsolescence 30/Jun/2011 |
| 标准包装： | 3,000 |
| 类型： | 低通 |
| 技术： | RC（Pi） |
| 通道数： | 8 |
| 中心 / 截止频率： | 110MHz（截止值） |
| 衰减值： | 30dB @ 800MHz ~ 6GHz |
| 电阻 - 通道 (Ohms)： | 100 |
| 值： | R = 100 欧姆，C = 15pF |
| ESD 保护： | 是 |
| 滤波器阶数： | 2nd |
| 应用： | 移动设备的数据线路 |
| 封装/外壳： | 16-WFDFN 裸露焊盘 |
| 尺寸/尺寸： | 0.157" L x 0.063" W（4.00mm x 1.60mm） |
| 高度： | 0.031"（0.80mm） |
| 包装： | 带卷 (TR) |
| 工作温度： | -40°C ~ 85°C |
CM1409
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Storage Temperature Range
DC Power per Resistor
DC Package Power Rating
Parameter
Rating
–65 to +150
100
500
Units
° C
mW
mW
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter
Operating Temperature Range
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Rating
–40 to +85
Units
° C
Symbol
R
C TOTAL
C
V DIODE
I LEAK
V SIG
V ESD
Parameter
Resistance
Total Channel Capacitance
Capacitance C 1
Standoff Voltage
Diode Leakage Current
(Reverse Bias)
Signal Clamp Voltage
Positive Clamp
Negative Clamp
In ? system ESD Withstand Voltage
a) Human Body Model,
MIL ? STD ? 883, Method 3015
b) Contact Discharge per
IEC 61000 ? 4 ? 2 Level 4
Conditions
At 2.5 VDC Reverse Bias, 1 MHz, 30 mVAC
At 2.5 VDC Reverse Bias, 1 MHz, 30 mVAC
I DIODE = 10 m A
V DIODE = 3.3 V
I LOAD = 10 mA
I LOAD = ? 10 mA
(Note 2)
Min
80
24
5.6
? 1.5
± 30
± 15
Typ
100
30
15
6.0
0.1
6.8
? 0.8
Max
120
36
1.0
9.0
? 0.4
Units
W
pF
pF
V
m A
V
kV
R DYN
Dynamic Resistance
Positive
Negative
2.3
0.9
W
f C
A 1GHz
A 800MHz ? 6GHz
Cut ? off Frequency
Z SOURCE = 50 W , Z LOAD = 50 W
Absolute Attenuation @ 1GHz from
0 dB Level
Absolute Attenuation @ 800 MHz to
6 GHz from 0 dB Level
Channel R = 100 W ,
Channel C = 15 pF
Z SOURCE = 50 W , Z LOAD = 50 W ,
DC Bias = 0 V (Notes 1 and 3)
Z SOURCE = 50 W , Z LOAD = 50 W ,
DC Bias = 0 V (Notes 1 and 3)
110
35
30
MHz
dB
dB
1. T A = 25 ° C unless otherwise specified.
2. ESD applied to input and output pins with respect to GND, one at a time.
3. Attenuation / RF curves characterized by a network analyzer using microprobes.
http://onsemi.com
3
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