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参数资料
| 型号： | CM200TU-5F |
| 厂商： | Powerex Inc |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | IGBT MOD 6PAC 250V 200A F SER |
| 标准包装： | 1 |
| 系列： | IGBTMOD™ |
| IGBT 类型： | 沟道 |
| 配置： | 三相反相器 |
| 电压 - 集电极发射极击穿（最大）： | 250V |
| Vge, Ic时的最大Vce（开）： | 1.7V @ 10V，200A |
| 电流 - 集电极 (Ic)（最大）： | 200A |
| 电流 - 集电极截止（最大）： | 1mA |
| Vce 时的输入电容 (Cies)： | 66nF @ 10V |
| 功率 - 最大： | 600W |
| 输入： | 标准 |
| NTC 热敏电阻： | 无 |
| 安装类型： | 底座安装 |
| 封装/外壳： | 模块 |
| 供应商设备封装： | 模块 |
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM200TU-5F
Trench Gate Design Six IGBTMOD?
200 Amperes/250 Volts
Absolute Maximum Ratings, T j = 25 ° C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T c = 25 ° C)
Peak Collector Current (T j ≤ 150 ° C)
Emitter Current**
Peak Emitter Current**
Maximum Collector Dissipation (T j < 150 ° C)
Mounting Torque, M5 Main Terminal
Mounting Torque, M5 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Symbol
T j
T stg
V CES
V GES
I C
I CM
I E
I EM
P c
–
–
–
V iso
CM200TU-5F
-40 to 150
-40 to 125
250
± 20
200
400*
200
400*
600
31
31
680
2500
Units
° C
° C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics, T j = 25 ° C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Voltage
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage**
Symbol
I CES
I GES
V GE(th)
V CE(sat)
Q G
V EC
Test Conditions
V CE = V CES , V GE = 0V
V GE = V CES , V CE = 0V
I C = 20mA, V CE = 10V
I C = 200A, V GE = 10V, T j = 25 ° C
I C = 200A, V GE = 10V, T j = 125 ° C
V CC = 100V, I C = 200A, V GE = 10V
I E = 200A, V GE = 0V
Min.
–
–
3.0
–
–
–
–
Typ.
–
–
4.0
1.2
1.1
–
Max.
1
0.5
5.0
1.7
–
–
2.0
Units
mA
μ A
Volts
Volts
Volts
nC
Volts
Dynamic Electrical Characteristics, T j = 25 ° C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
C ies
C oes
C res
Test Conditions
V CE = 10V, V GE = 0V
Min.
–
–
–
Typ.
–
–
–
Max.
66
3.0
2.3
Units
nf
nf
nf
Resistive
Load
Switch
Times
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
t d(on)
t r
t d(off)
t f
V CC = 100V, I C = 200A,
V GE1 = V GE2 = 10V,
R G = 13 , Resistive
Load Switching Operation
–
–
–
–
–
–
–
–
700
1800
700
500
ns
ns
ns
ns
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
t rr
Q rr
I E = 200A, di E /dt = -400A/ μ s
I E = 200A, di E /dt = -400A/ μ s
–
–
–
300
–
ns
μ C
Thermal and Mechanical Characteristics, T j = 25 ° C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Symbol
R th(j-c) Q
R th(j-c) R
R th(c-f)
Test Conditions
Per IGBT 1/6 Module
Per Free-Wheel Diode 1/6 Module
Per 1/6 Module, Thermal Grease Applied
Min.
–
–
–
Typ.
–
–
0.09
Max.
0.21
0.47
–
Units
° C/W
° C/W
° C/W
* Pulse width and repetition rate should be such that the device junction temperature (T j ) does not exceed T j(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
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