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参数资料
| 型号： | CM50MX-24A |
| 厂商： | Powerex Inc |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | CIB MOD 1200V 50A NX SER |
| 标准包装： | 2 |
| 配置： | 三相反相器，带制动器 |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 2.6V @ 15V，50A |
| 电流 - 集电极 (Ic)（最大）： | 50A |
| 电流 - 集电极截止（最大）： | 1mA |
| Vce 时的输入电容 (Cies)： | 8.5nF @ 10V |
| 功率 - 最大： | 355W |
| 输入： | 三相桥式整流器 |
| NTC 热敏电阻： | 是 |
| 安装类型： | 底座安装 |
| 封装/外壳： | 模块 |
| 供应商设备封装： | 模块 |
| 配用： | BG2B-5015-ND - KIT DEV BOARD 2CN 5A FOR IGBT BG2B-3015-ND - KIT DEV BOARD 2CN 3A FOR IGBT BG2B-1515-ND - KIT DEV BOARD 1.5A FOR IGBT BG2A-NF-ND - KIT DEV BOARD FOR IGBT |
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM50MX-24A
NX-Series CIB Module
(3? Converter + 3? Inverter + Brake)
50 Amperes/1200 Volts
Absolute Maximum Ratings, T j = 25°C unless otherwise specified
Characteristics
Symbol
CM50MX-24A
Units
Inverter Part IGBT/FWDi
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current (DC, T C = 97°C) *2,*4
Collector Current (Pulse) *3
Total Power Dissipation (T C = 25°C) *2,*4
V CES
V GES
I C
I CRM
P tot
1200
±20
50
100
355
Volts
Volts
Amperes
Amperes
Watts
I E
Emitter
Current *2
*1
50
Amperes
Emitter Current (Pulse) *3
I ERM *1
100
Amperes
Brake Part IGBT/ClampDi
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
V CES
V GES
1200
±20
Volts
Volts
Collector Current (DC, T C =
106°C) *2,*4
I C
30
Amperes
Collector Current (Pulse) *3
Total Power Dissipation (T C = 25°C) *2,*4
Repetitive Peak Reverse Voltage
I CRM
P tot
V RRM
60
260
1200
Amperes
Watts
Volts
Forward Current (T C =
25°C) *2
I F
30
Amperes
Forward Current (Pulse) *3
I FRM
60
Amperes
Converter Part ConvDi
Repetitive Peak Reverse Voltage
Recommended AC Input Voltage
DC Output Current (3-Phase Full Wave Rectifying, f = 60Hz,T C = 125°C) *2,*4
Surge Forward Current (Sine Half-wave 1 Cycle Peak Value, f = 60Hz, Non-repetitive)
Current Square Time (Value for One Cycle of Surge Current)
V RRM
E a
I O
I FSM
I 2 t
1600
440
50
500
1040
Volts
Volts
Amperes
Amperes
A 2 s
Module
Isolation Voltage (Charged Part to Baseplate, RMS, f = 60Hz, AC 1 min.)
Junction Temperature
Storage Temperature
*1
Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
V ISO
T j
T stg
Chip Location (Top View)
2500
-40 ~ +150
-40 ~ +125
Volts
°C
°C
*2
*3
*4
Junction temperature (T j ) should not increase beyond maximum junction temperature (T j(max) ) rating.
Pulse width and repetition rate should be such that device junction temperature (T j ) does not exceed T j(max) rating.
Case temperature (T C ) and heatsink temperature (T s ) is measured on the surface (mounting side) of the baseplate
and the heatsink side just under the chips. Refer to the figure to the right for chip location.
IGBT
FWDi
Converter Diode
NTC Thermistor
The heatsink thermal resistance should be measured just under the chips.
0
53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
0
RN SN
W N
28.4 27.4
34.9
42.0
43.3
54
55
56
57
58
59
60
61
TN U P V P
RP SP TP U P U N V P
U N
Br
W P
Th
V N W P
V N W N
Br
30
29
28
27
26
25
24
23
18.6
26.7 27.9
35.6
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22
Dimensions in mm (Tolerance: ± 1mm)
2
Rev. 11/11
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PDF描述 |
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| CM50RL-24NF | IGBT MOD 7PAC 1200V 50A NF SER |
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| CM50TF-24H | IGBT MOD 6PAC 1200V 50A H SER |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CM50MX-24A_12 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE |
| CM50MXA-24S | 制造商:Powerex Power Semiconductors 功能描述:IGBT MOD CIB 50A 1200V 制造商:Powerex Power Semiconductors 功能描述:IGBT, MODULE, 1.2KV, 50A, Transistor Polarity:N Channel, DC Collector Current:50A, Collector Emitter Voltage Vces:1.8V, Power Dissipation Pd:425W, Collector Emitter Voltage V(br)ceo:1.2kV, Operating Temperature Min:-40C 制造商:Powerex Power Semiconductors 功能描述:IGBT MODULE NX-SERIES CIB 制造商:Powerex Power Semiconductors 功能描述:POWER IGBT TRANSISTOR |
| CM50RL-24NF | 功能描述:IGBT MOD 7PAC 1200V 50A NF SER RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| CM50RL-24NF_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE |
| CM50TF12E | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 50A I(C) |
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